Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors

Kim, Sang Woo; Zimmerman, Jeramy D.; Focardi, Paolo; Gossard, A. C.; Wu, Dong Ho; Sherwin, Mark S.

doi:10.1063/1.2947587

Cited by 30 publications

(20 citation statements)

References 8 publications

(5 reference statements)

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“…It is found that the quantum ring intersublevel detectors (QRIDs) exhibit very low dark current and strong response in the 1-3 THz range, with the peak response measured at 1.82 THz (165 μm) in the temperature range of 5-10 K. This detection peak is characterized by a peak responsivity of 25 A/W and specific detectivity of 1×10 16 Jones [298]. THz detector response can be enhanced by surface plasmon effects [299][300][301]. When the energy of the plasma− −wave frequencies is quantized, the quanta are called plas− mons.…”

Section: Novel Thz Detectorsmentioning

confidence: 98%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

323

225

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Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands.In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

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Section: Novel Thz Detectorsmentioning

confidence: 98%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

323

225

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“…4 It is naturally expected that a resonant response would allow for more sensitive detection and also allow for spectral resolution. [4][5][6][7][8][9][10][11][12] However, experimental results reported so far show that the resonant response is much weaker than the nonresonant response and the former is usually submerged into the latter. [5][6][7] The amplitude of the resonant response is limited by the quality factor (Q ¼ x p s p , where x p is the plasmon's angular frequency and s p is the plasmon's relaxation time) of the plasmon resonance.…”

mentioning

confidence: 87%

The effect of symmetry on resonant and nonresonant photoresponses in a field-effect terahertz detector

Sun

Qin

Lewis

et al. 2015

Applied Physics Letters

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The effect of the symmetries in the terahertz (THz) field distribution and the field-effect channel on THz photoresponse is examined. Resonant excitation of cavity plasmon modes and nonresonant self-mixing of THz waves are demonstrated in a GaN/AlGaN two-dimensional electron gas with symmetrically designed nanogates, antennas, and filters. We found that the self-mixing signal can be effectively suppressed by the symmetric design and the resonant response benefits from the residual asymmetry. The findings suggest that a single detector may provide both high sensitivity from the self-mixing mechanism and spectral resolution from the resonant response by optimizing the degree of geometrical and/or electronic symmetries.

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“…Plasmon-resonant detectors have recently received attention [9]. Also, plasmon-based field effect transistors operating at room temperature have been demonstrated [10,11]. In general, broadband detectors such as bolometers or Golay cells suffer from slow response time or cryogenic operation.…”

Section: Introductionmentioning

confidence: 99%

Large-area microstructured photomixer as scannable detector of continuous-wave terahertz radiation

et al. 2012

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Detection of continuous-wave (CW) terahertz (THz) radiation is demonstrated using a large-area microstructured photomixer. The photomixer, which has interdigitated electrodes, is utilized in an incoherent detection scheme without any focusing optics for the incoming THz radiation. The large-area microstructured photomixer is driven at a high laser power of 900 mW, which results in an increased responsivity of 120 mA/W, in comparison with conventional small-area photomixer detectors. By mapping out the receiving pattern of the photomixer detector, we show that the large-area photomixer is capable of scanning the incident THz beam by changing the incidence angles of the CW laser beams used in the photomixing detection process. We demonstrate a scan range of 50°. Moreover, the optimum spot size of the laser beams illuminating the photomixer detector for maximizing the responsivity of the detector is specified.

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Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors

Cited by 30 publications

References 8 publications

Terahertz detectors and focal plane arrays

Terahertz detectors and focal plane arrays

The effect of symmetry on resonant and nonresonant photoresponses in a field-effect terahertz detector

Large-area microstructured photomixer as scannable detector of continuous-wave terahertz radiation

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