Room-temperature UV-ozone assisted solution process for zirconium oxide films with high dielectric properties

Dong, Xiaomeng; Zhang, Qian; Li, Lubin; Gong, Hongyu; Bi, Jianqiang; Wang, Sumei

doi:10.1016/j.ceramint.2017.08.055

Cited by 35 publications

(37 citation statements)

References 50 publications

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“…Although no intentional TA was applied, the authors reported a sample temperature increase to about 50 °C during the treatment. Resulting devices showed good performance with electron mobility of 1.65 cm 2 V −1 s −1 and channel current on/off ratio up to 10 5 …”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

“…The energies at these wavelengths (472 and 647 kJ mol −1 ) are adequate to break the bonds of common chemical groups such CO, CC and CH which are found in many soluble metal‐oxide precursors . Additionally, the shorter wavelength photons promote the formation of ozone (O 3 ) when the DUV treatment is carried out in an air environment, which results in further chemical reactions …”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

“…Overall, for the fabrication of metal‐oxide electronic devices such as thin‐film transistors, there is a wide range of precursors to choose from. The most common choices include metal compounds based on nitrates, acetylacetonates, alkoxides, or acetates and to a lesser extent chlorides, acrylates, and hydroxides . The kinds of materials that were successfully processed with the help of DUV irradiation include all those that are required to form metal‐oxide TFTs, i.e., semiconductors, dielectrics, and conductors.…”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

“…The kinds of materials that were successfully processed with the help of DUV irradiation include all those that are required to form metal‐oxide TFTs, i.e., semiconductors, dielectrics, and conductors. Among them, the most commonly employed n‐type semiconductors are IGZO, IZO, zinc tin oxide (ZTO), as well as the binary compounds ZnO, In 2 O 3 , and GaO x . For p‐type oxides, there are far fewer studies available, with Cu 2 O being one of the exceptions …”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

“…Regarding dielectric materials, the most prominent examples are found to be Al 2 O 3 and ZrO x and their derivatives (ZrAlO x or YAlO x ) as well as HfO x and SiO 2 . On the other hand, the pool of conductive materials mostly contains indium‐doped tin oxide (ITO), antimony doped SnO 2 or nanoparticle layers based on Ag .…”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

See 4 more Smart Citations

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

See 3 more Smart Citations

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

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Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

et al. 2018

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The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.

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High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Bukke

Mude

Saha

et al. 2019

Adv Materials Inter

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been widely used as the active semiconductor materials for the oxide TFTs. For example, amorphous indium-zinc-tin oxide (a-IZTO) as an active layer on high-k dielectric material such as aluminum oxide (AlO x ), [42][43][44] zirconium oxide (ZrO x ), [45][46][47][48] hafnium oxide (HfO x ), [49] zirconium-doped aluminum oxide (ZAO), [50] and lanthanum doped zirconium oxide (LaZrO x ) [51] have been used for solution process. The purpose of using a high-κ gate insulator is for the low voltage driven oxide TFTs.The oxide TFT could be annealed at a higher temperature (>500 °C) [52] to improve its performance and stability, but higher annealing temperature prevents the use of the plastic substrate for the flexible display. [53] Also, various process technologies are developed to improve the film quality, for example, Ar/O 2 plasma treatment, [54] O 2 annealing, [55] and UV ozone treatment. [56] Many of the previous reports have focused on the thin-film quality and lowering fabrication process temperature by using the UV treatment [57] or combustion method. [58] Moreover, to address present-day microelectronics challenges, the synthesis of high-quality semiconductor precursor solution is essential for high performance, oxide TFTs at low processing temperatures.In this study, we report the impact of metal oxide precursor purification on the performance of TFTs. Smooth surface morphology and the high-quality interface between a-IZTO and ZrO x are confirmed by atomic force microscopy (AFM) and X-ray photoelectron spectroscopic (XPS) analysis, respectively. The mobility, ON/OFF current ratio, gate voltage swing (SS), and hysteresis of the purified a-IZTO TFTs are significantly improved compared to the TFTs using unpurified precursor solutions. The hysteresis and positive bias-stress stability of the transfer curve for the purified a-IZTO TFTs are improved as a result of the reduced interface charge trapping. Therefore, the purification of the oxide semiconductor is an essential step for high performance, solution processed oxide TFTs.

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Room-temperature UV-ozone assisted solution process for zirconium oxide films with high dielectric properties

Cited by 35 publications

References 50 publications

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

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