Room‐Temperature van der Waals Ferromagnet Switching by Spin‐Orbit Torques

Abstract

Emerging wide varieties of the van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next‐generation spintronic devices. However, due to the lower Curie temperature of the vdW ferromagnets than room temperature, electrically manipulating its magnetization at room temperature has not been realized. In this work, we demonstrate the perpendicular magnetization of vdW ferromagnet Fe3GaTe2 can be effectively switched at room temperature in Fe3GaTe2/Pt bilayer by spin‐orbit torques (SOTs) with a relatively low current density of 1.3×107A/cm2. Moreover, the high SOT efficiency of is quantitatively determined by harmonic measurements, which is higher than those in Pt‐based heavy metal/conventional ferromagnet devices. Our findings of room‐temperature vdW ferromagnet switching by SOTs provide a significant basis for the development of vdW‐ferromagnet‐based spintronic applications.This article is protected by copyright. All rights reserved

Tuning magnetic properties of two-dimensional antiferromagnetic <i>M</i>P<i>X</i>₃ by organic cations intercalation

“…利用电场可以实现Fe 3 GeTe 2 / Cr 2 Ge 2 Te 6 /Fe 3 GeTe 2 磁隧道结开关场的双极调 控 [35] . 自旋轨道矩 (SOT) 可以高效驱动二维磁性材 料 (如Fe 3 GeTe 2 [48][49][50][51] , Cr 2 Ge 2 Te 6 [52][53][54] , Fe 3 GaTe 2 [55] 等) 的磁矩翻转. 在Fe 3 GeTe 2 /Pt异质结中, 在面 内磁场的辅助下, 约10 7 A/cm 2 的电流密度可以驱 动少层Fe 3 GeTe 2 的磁矩翻转 [50] ; 随着界面质量进 一步提高, SOT效率可达0.18 [48] .…”

Recent advances in two-dimensional intrinsic ferromagnetic materials Fe3X(X=Ge and Ga)Te2 and their heterostructures for spintronics

“…Unsurprisingly, 2D Fe 3 X ( X =Ge and Ga)Te 2 has become a rising star in spintronic applications, and a small writing current has been achieved in Fe 3 X ( X =Ge and Ga)Te 2 -based devices, which are energy-efficient. 35–37 Despite many reviews 20,38–47 on 2D vdW magnets, little effort has been put into reviewing the recent progress on Fe 3 X ( X =Ge and Ga)Te 2 and its vdW heterostructures (vdWHs). Herein, an overview of the recent advancements in novel findings related to Fe 3 X ( X =Ge and Ga)Te 2 and their vdWHs is strategically summarized by introducing fabrication methods and fundamental physical properties, presenting promising applications associated with critical effects, such as the exchange bias (EB) effect, magnetoresistance (MR) effect, spin–orbit torque (SOT) effect, magnetic proximity effect and Dzyaloshinskii–Moriya interaction, and revealing underlying mechanisms (Fig.…”

“…Recent advancements in the SOT effect based on Fe 3 GaTe 2 have shown promising results, such as room-temperature magnetization switching. Li et al 36 achieved room-temperature incomplete magnetization switching by the SOT effect using an in-plane magnetic field of 200 mT in Fe 3 GaTe 2 (20 nm)/Pt (6 nm) system, where the switching current density is 1.3 × 10 7 A cm −2 and ξ DL obtained by harmonic measurements is ∼0.22. Similarly, the SOT effect with the assistance of an in-plane magnetic field of 100 Oe at 320 K was observed by Kajale et al 165 in Fe 3 GaTe 2 (57.9 nm)/Pt (6 nm) system with a switching current density of 1.69 × 10 6 A cm −2 and ξ DL of 0.093.…”

Critical behavior of quasi-two-dimensional ferromagnet Cr1.04Te2

“…Two-dimensional (2D) magnetic van der Waals (vdW) materials hold significant promise for spintronic device applications. [1][2][3][4][5][6] Ongoing research on 2D vdW ferromagnets has led to the discovery of numerous materials, [7][8][9][10][11] such as Fe 3 GaTe 2 [12,13] and CrTe 2 , [14] which have the Curie temperature (T C ) above the room temperature. In recent years, the binary chromium chalcogenides have drawn significant interest due to their outstanding magnetic, transport, and optical properties.…”