Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-beam direct write

Abstract

Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources

Emission channeling studies of Pr in GaN

“…While interest in the past focused mostly on infrared applications, especially Er-doped GaN devices emitting at 1.54 µm, it has been shown recently that electroluminescence in the red, green and blue can be produced by doping GaN with Eu [2], Er [3], and Tm [4], respectively. Photo-and electroluminescence in the red region of the spectrum (650 nm) was also obtained from praseodymium (Pr) doped GaN [5][6][7]. Cathodoluminescence in the visible region of the spectrum has been observed from GaN doped with Dy, Er, Tm [8] and Sm or Ho [9].…”

Lattice location and optical activation of rare earth implanted GaN

“…While most studies before 1998 reported only results for the temperature range below 1000°C, newer work focuses increasingly on temperatures at 1100°C and above. Three papers have investigated whether the luminescence intensity of implanted GaN:Er depends on the type of starting material, and found no striking differences between MBE, HVPE or MOCVD GaN [20,22,36].…”

Spectroscopic characterization of Praseodymium doped Gallium Nitride powder prepared by a Na flux method

“…1(b)). Additional emission lines were noted at 1108, 1145, and 1185 nm, but the origin of these lines has not yet been identified [11][12][13]. A schematic energy level diagram of Pr 3+ depicting all identified PL lines is shown in Fig.…”

“…There are several reports regarding photoluminescence (PL), electroluminescence (EL), and cathodoluminescence (CL) in the red spectral region from Pr 3+ doped GaN films grown by ion implantation, solid source MBE, and metal-organic chemical vapor deposition (MOCVD) [11][12][13][14][15][16][17][18][19] [16]. Effects of the oxygen incorporation and thermal annealing on the red PL intensity of Pr implanted GaN samples were investigated by Zavada et al [13] and others [17,19].…”

“…Pr 3+ doping of GaN has been of interest for photonic applications due to the strong red emission at ∼650 nm and IR emission at ∼1300 nm [11][12][13]. There are several reports regarding photoluminescence (PL), electroluminescence (EL), and cathodoluminescence (CL) in the red spectral region from Pr 3+ doped GaN films grown by ion implantation, solid source MBE, and metal-organic chemical vapor deposition (MOCVD) [11][12][13][14][15][16][17][18][19] [16].…”