1999
DOI: 10.1063/1.1149870
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Rotating analyzer–fixed analyzer ellipsometer based on null type ellipsometer

Abstract: The theory and design of an inexpensive rotating analyzer unit is presented, which allows a conventional null type ellipsometer to work as rotating analyzer-fixed analyzer automatic ellipsometer, without sacrificing the possibility to work in null mode. The mode switching is performed simply by adding or removing the rotating analyzer from its holder. It is shown that the rotating analyzer phase shift in rotating analyzer-fixed analyzer mode can be run-time determined from the measured Fourier coefficients. Th… Show more

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Cited by 19 publications
(13 citation statements)
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“…The Setup . The adsorbed protein amount was measured by ellipsometry, using a “rotating analyzer” apparatus (with a fixed angle of incidence of 50°). , The scheme of the ellipsometer is shown in Figure a. The two ellipsometric parameters Ψ and Δ, which characterize the protein layer, were determined as functions of time.…”
Section: Methodsmentioning
confidence: 99%
“…The Setup . The adsorbed protein amount was measured by ellipsometry, using a “rotating analyzer” apparatus (with a fixed angle of incidence of 50°). , The scheme of the ellipsometer is shown in Figure a. The two ellipsometric parameters Ψ and Δ, which characterize the protein layer, were determined as functions of time.…”
Section: Methodsmentioning
confidence: 99%
“…The polymer adsorption on the air−water interface was determined by ellipsometry. The used instrument is a modification of a conventional null type ellipsometer (LEF 3M, Novosibirsk, Russia), which is adapted for kinetic measurements with time resolution of 1 s. 42 A solid state laser (λ = 532 nm, Compass 215M, Coherent), equipped with a light polarizer, emits a beam with a certain polarization state. All experiments are performed at 50°angle of incidence, which is close to the Brewster angle for water, 53.1°.…”
Section: Foam Testmentioning
confidence: 99%
“…%), spun at 3000 rpm for 60 s on a microscope cover slip (20 × 20 mm) and hot plate baked at 180°C for 2 minutes. The thickness of the PMMA layer after baking was 105 nm (measured ellipsometrically (Russev & Arguirov, 1999). To avoid charging effects a 200 nm layer of chromium was electron beam evaporated (Edwards E610A) onto the substrate before deposition of the resist.…”
Section: Exemplary Resultsmentioning
confidence: 99%