2019
DOI: 10.1002/pssb.201900663
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Rotation Tunable Photocatalytic Properties of ZnO/GaN Heterostructures

Abstract: Using hybrid density functional calculations, the influence of rotation angles on the photocatalytic performance of 2D ZnO/GaN heterostructures is explored. The results show that the bandgaps and band alignments for ZnO/GaN heterostructures can be tuned by rotation angles. Rotated ZnO/GaN heterostructures are favorable for visible light absorption. Band alignments of different rotated ZnO/GaN heterostructures are severally thermodynamically favorable for spontaneous generation of hydrogen and oxygen with the p… Show more

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Cited by 13 publications
(13 citation statements)
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References 61 publications
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“…The emergence of vdWHs in the 2D field offers a new way to combine different monolayers for novel electronic, optoelectronic, and photocatalytic applications. 36,37 Some vdWHs based on MXene, AlN, and GaN like MoS 2 /MXene, 38 TiO 2 /Mxenes, 39 MXene/graphene, 40 TMDCs/MXenes, 41 SiS/MXenes, 42 BSe/MXenes, 43 AlGaN/GaN, 44 MoSe 2 /GaN, 45 AlN/GaN, 46 WS 2 /GaN, 47 ZnO/GaN, 48 graphene/AlN, 49 BP/AlN, 50 and AlN/InSe, 51 have already been fabricated for practical device applications. Electronic structure, optical properties and overall water splitting performance of GaN/Hf 2 CO 2 and AlN/Hf 2 CO 2 vdWHs have been investigated in ref.…”
Section: Introductionmentioning
confidence: 99%
“…The emergence of vdWHs in the 2D field offers a new way to combine different monolayers for novel electronic, optoelectronic, and photocatalytic applications. 36,37 Some vdWHs based on MXene, AlN, and GaN like MoS 2 /MXene, 38 TiO 2 /Mxenes, 39 MXene/graphene, 40 TMDCs/MXenes, 41 SiS/MXenes, 42 BSe/MXenes, 43 AlGaN/GaN, 44 MoSe 2 /GaN, 45 AlN/GaN, 46 WS 2 /GaN, 47 ZnO/GaN, 48 graphene/AlN, 49 BP/AlN, 50 and AlN/InSe, 51 have already been fabricated for practical device applications. Electronic structure, optical properties and overall water splitting performance of GaN/Hf 2 CO 2 and AlN/Hf 2 CO 2 vdWHs have been investigated in ref.…”
Section: Introductionmentioning
confidence: 99%
“…The AB configuration exhibits the highest stability, with a binding energy of −54 meV Å −2 , which is consistent with the conclusion from interlayer the distance and previous calculation. [ 63 ] In addition, the value of E b also proves the van der Waals interaction between the GaN and ZnO layers. [ 64 ] It is worth mentioning that, incommensurate heterobilayers with small lattice mismatch can lead to interesting moiré superlattices, [ 45,65 ] and show highly tunable SHG in the twistable vdW systems.…”
Section: Resultsmentioning
confidence: 99%
“…[15], [19], [28], [34]. This mismatch value is also in the allowable value (below 5%) of the vdW stacking, suggesting the possibility of stacking.…”
Section: A Structural Propertiesmentioning
confidence: 90%