Roughening and smoothing behavior of single crystal Si by low energy Ar+ ion bombardment

Pahlovy, Shahjada A.; Mahmud, Syeda Faria; Yanagimoto, K.; Aikawa, Naoko; Miyamoto, Iwao

doi:10.1016/j.nimb.2011.01.066

Cited by 8 publications

(2 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4(b) that the model-based roughness increases with energy as +exp(+0.02355·T) but the experiment-based roughness shows a scaling law with the slowly growing early/late-stage and a rapidly growing medium-stage. This obvious difference of real experiments with our model just considering sputtering and re-deposition is certainly related to such nondeterministic factors [14] like surface diffusion, preferential sputtering, viscous flow, ballistic drift, etc. Similarly, we have obtained only the experiment-based roughness evolution with work distance as shown in Fig.…”

Section: Results and Discussion On Roughnessmentioning

confidence: 83%

Study on mechanism and process of ion beam machining on high-precision large optical surfaces

Xiao

Wang

et al. 2014

SPIE Proceedings

View full text Add to dashboard Cite

Ion beam machining has become an important means adopted to high-precision large optical mirror processing. This study has conducted a bitmap-style model, calculation and analysis on low-energy Ar+ ion beam sputtering optical surface, based on Sigmund Theory and the CCOS principle. We have obtained the relationship of the removal function and the removal rate with major technological parameters of ion beam machining (e.g. dwell time, work distance, ion energy, etc.) also via orthogonal experiments of single point removal. Results indicated that the removal rate of amorphous SiO 2 (fused silica) by Ar + ions with 600~1200 electron volts increases with the increase of ion energy and dwell time at different extents, decreases exponentially with the increase in work distance. On the basis of computational analysis and experimental investigations, we optimized process conditions and further figured the plane mirror with the clear aperture of 130 millimeters, utilizing technologically optimized low-energy Ar+ ion beam machining. Eventually we obtained the high-precision figure shape with the post-machined surface roughness of 0.43~0.44 nm rms and the post-machined figure error of 1 nm rms.

show abstract

Section: Results and Discussion On Roughnessmentioning

confidence: 83%

Study on mechanism and process of ion beam machining on high-precision large optical surfaces

Xiao

Wang

et al. 2014

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…In the case of the 500 eV Ar þ ion beam machining of Si wafers, an almost atomically smooth surface (cleaved surface: 0.04 nm rms) was roughened by ion beam machining and converged to 0.07 nm rms at a machined depth of 50 nm, and also a rough surface of about 0.12 nm rms (commercially available Si wafer) was smoothened and converged to 0.07 nm rms. 26) Namely, the smooth and rough surfaces converge to the same value by ion beam machining at a machined depth of 50 nm. Moreover, the methods shown in Figs.…”

Section: Introductionmentioning

confidence: 96%

Low Energy Xe⁺ Ion Beam Machining of the Ultralow Expansion Glass Substrates for Aspherical Extreme Ultraviolet Lithography Projection Optics

Endo

Yamada

Pahlovy

et al. 2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Aspherical substrates for extreme ultraviolet lithography (EUVL) optics require an ultrahigh shape accuracy of less than 0.15 nm rms and a high-spatial frequency roughness (HSFR; spatial wavelength: less than 1 µm) of 0.12 nm rms. Generally, the ultra low expansion glass (ULE®) substrate with HSFR of 0.06–0.08 nm rms can be produced by mechanical machining methods. However, it is difficult to obtain the shape accuracy of less than 0.12 nm rms using mechanical machining methods. Therefore, ion beam figuring (IBF) may be adapted to final shape correction of the substrates for the projection optics of EUVL tools. In this study, we investigated the HSFR and machining rate of the ULE® substrate machined by a 0.3–1.0 keV Xe+ ion beam at off normal ion incidence angles and obtained the following results: the HSFRs of the ULE® substrate machined by a 1.0 keV Xe+ ion beam at a ion incidence angle of lower than 30° and a 0.3–0.5 keV Xe+ ion beam at an ion incidence angle of 0–45° are below 0.12 nm rms, which is smaller than the required HSFR specification of EUVL projection optics. From our experimental result and discussion, we concluded that the scan fine beam and tilt target mode smoothing for processing of the ULE® substrate meets the required specification of the HSFR (0.12 nm rms) of hemispherical ULE® substrates of EUVL projection optics.

show abstract

Evolution of Topography Under Low-Energy Ion Bombardment

Rauschenbach

2022

Low-Energy Ion Irradiation of Materials

View full text Add to dashboard Cite

Roughening and smoothing behavior of single crystal Si by low energy Ar+ ion bombardment

Cited by 8 publications

References 19 publications

Study on mechanism and process of ion beam machining on high-precision large optical surfaces

Study on mechanism and process of ion beam machining on high-precision large optical surfaces

Low Energy Xe⁺ Ion Beam Machining of the Ultralow Expansion Glass Substrates for Aspherical Extreme Ultraviolet Lithography Projection Optics

Evolution of Topography Under Low-Energy Ion Bombardment

Contact Info

Product

Resources

About

Roughening and smoothing behavior of single crystal Si by low energy Ar+ ion bombardment

Cited by 8 publications

References 19 publications

Study on mechanism and process of ion beam machining on high-precision large optical surfaces

Study on mechanism and process of ion beam machining on high-precision large optical surfaces

Low Energy Xe+ Ion Beam Machining of the Ultralow Expansion Glass Substrates for Aspherical Extreme Ultraviolet Lithography Projection Optics

Evolution of Topography Under Low-Energy Ion Bombardment

Contact Info

Product

Resources

About

Low Energy Xe⁺ Ion Beam Machining of the Ultralow Expansion Glass Substrates for Aspherical Extreme Ultraviolet Lithography Projection Optics