Route towards efficient magnetization reversal driven by voltage control of magnetic anisotropy

One, Roxana-Alina; Béa, Hélène; Mican, Sever; Joldos, Marius; Veiga, Pedro Brandão; Diény, B.; Buda-Prejbeanu, L. D.; Tiuşan, C.

doi:10.1038/s41598-021-88408-z

Cited by 7 publications

(4 citation statements)

References 38 publications

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“…To achieve deterministic switching, the voltage pulse should be turned off after the magnetization completes half precession cycle. 209 The voltage pulse width (t PW ) can be given by 209,214,217…”

Section: Operation Window Improvementmentioning

confidence: 99%

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Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Mishra,

Sravani,

Bose

et al. 2024

Journal of Applied Physics

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Electronic spins provide an additional degree of freedom that can be used in modern spin-based electronic devices. Some benefits of spintronic devices include nonvolatility, energy efficiency, high endurance, and CMOS compatibility, which can be leveraged for data processing and storage applications in today's digital era. To implement such functionalities, controlling and manipulating electron spins is of prime interest. One of the efficient ways of achieving this in spintronics is to use the electric field to control electron spin or magnetism through the voltage-controlled magnetic anisotropy (VCMA) effect. VCMA avoids the movement of charges and significantly reduces the Ohmic loss. This article reviews VCMA-based spintronic devices for magnetic memory applications. First, we briefly discuss the VCMA effect and various mechanisms explaining its physical origin. We then mention various challenges in VCMA that impede it for practical VCMA-based magnetic memory. We review various techniques to address them, such as field-free switching operation, write error rate improvement, widening the operation window, enhancing the VCMA coefficient, and ensuring fast-read operation with low read disturbance. Finally, we draw conclusions outlining the future perspectives.

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Section: Operation Window Improvementmentioning

confidence: 99%

“…218 They reported a long tolerance of few ns where WER values are in the range of 2 Â 10 À5 -10 À3 . In 2021, One et al 217 studied VCMA switching using detailed macro-spin simulation. As per their analysis, important switching behavior parameters are the damping constant and the anisotropy field modulation (p).…”

Section: Device and Pulse Engineeringmentioning

confidence: 99%

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Mishra,

Sravani,

Bose

et al. 2024

Journal of Applied Physics

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“…The strategy of skyrmion manipulation by electric fields is one of the most energetically efficient options. It is based on the electric field control of the perpendicular magnetic anisotropy [36]. In Figure 25a, we zoom on a skyrmionic zone within a ground states DMI-PMA-Q diagram.…”

Section: Skyrmion Manipulation By Electric Fieldsmentioning

confidence: 99%

Micromagnetic Design of Skyrmionic Materials and Chiral Magnetic Configurations in Patterned Nanostructures for Neuromorphic and Qubit Applications

et al. 2022

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Our study addresses the problematics of magnetic skyrmions, nanometer-size vortex-like swirling topological defects, broadly studied today for applications in classic, neuromorphic and quantum information technologies. We tackle some challenging issues of material properties versus skyrmion stability and manipulation within a multiple-scale modeling framework, involving complementary ab-initio and micromagnetic frameworks. Ab-initio calculations provide insight into the anatomy of the magnetic anisotropy, the Dzyaloshinskii–Moriya asymmetric exchange interaction (DMI) and their response to a gating electric field. Various multi-layered heterostructures were specially designed to provide electric field tunable perpendicular magnetization and sizeable DMI, which are required for skyrmion occurrence. Landau–Lifshitz–Gilbert micromagnetic calculations in nanometric disks allowed the extraction of material parameter phase diagrams in which magnetic textures were classified according to their topological charge. We identified suitable ranges of magnetic anisotropy, DMI and saturation magnetization for stabilizing skyrmionic ground states or writing/manipulating them using either a spin-transfer torque of a perpendicular current or the electric field. From analyzing the different contributions to the total magnetic free energy, we point out some critical properties influencing the skyrmions’ stability. Finally, we discuss some experimental issues related to the choice of materials or the design of novel magnetic materials compatible with skyrmionic applications.

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“…We have previously proposed a writing scheme based on heavily damped precession of the magnetization, where the WER is less sensitive to the pulse width [20][21][22][23]. Even when the voltage is applied for over half a precession period, the magnetization is kept near the opposite direction of the initial state, so the pulse width does not need to be controlled precisely.…”

Section: Introductionmentioning

confidence: 99%

Heavily Damped Precessional Switching with Very Low Write-Error Rate in Elliptical-Cylinder Magnetic Tunnel Junctions

Matsumoto

Yuasa²,

Imamura³

2022

Phys. Rev. Applied

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Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expected to be an ultimate non-volatile memory with ultra-low power consumption. In conventional dynamic switching, the width of sub-nanosecond write voltage pulses must be precisely controlled to achieve a sufficiently low write-error rate (WER). This very narrow tolerance of pulse width is the biggest technical difficulty in developing VCMRAM. Heavily damped precessional switching is a writing scheme for VCMRAM with a substantially high tolerance of pulse width although the minimum WER has been much higher than that of conventional dynamic switching with an optimum pulse width. In this study, we theoretically investigate the effect of MTJ shape and the direction of the applied magnetic field on the WER of heavily damped precessional switching. The results show that the WER in elliptical-cylinder MTJ can be several orders of magnitude smaller than that in usual circular-cylinder MTJ when the external magnetic field is applied parallel to the minor axis of the ellipse. The reduction in WER is due to the fact that the demagnetization field narrows the component of the magnetization distribution perpendicular to the plane direction immediately before the voltage is applied.

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Route towards efficient magnetization reversal driven by voltage control of magnetic anisotropy

Cited by 7 publications

References 38 publications

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Micromagnetic Design of Skyrmionic Materials and Chiral Magnetic Configurations in Patterned Nanostructures for Neuromorphic and Qubit Applications

Heavily Damped Precessional Switching with Very Low Write-Error Rate in Elliptical-Cylinder Magnetic Tunnel Junctions

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