RRAM-based synapse for neuromorphic system with pattern recognition function

Park, S.; Kim, H.; CHOO, MYUNGYEOP; Noh, Jinwoo; Sheri, Ahmad Muqeem; Jung, Seung Min; Seo, Kyung Wook; Park, J.; Kim, S.; Lee, W.; Shin, Jong Won; Lee, D.; Choi, Gahyun; Woo, Jiyong; Cha, Euijun; Jang, Junwon; Park, C.; Jeon, Moongu; Lee, B.; Lee, B. H.; Hwang, Hyunsang

doi:10.1109/iedm.2012.6479016

Cited by 159 publications

(113 citation statements)

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“…In particular, Pr 0.7 Ca 0.3 MnO 3 (PCMO)-based ReRAM can be utilized as a synapse device on the basis of its demonstrated reliable characteristics. 11,12,18 According to previously reported studies, PCMO-based synapse devices (PCMO-synapse) exhibit spike-timingdependent plasticity (STDP) which is a change in the conductance of the PCMO-synapse by temporally modified pre-and post-neuron spikes, as shown in Fig. 1(a).…”

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confidence: 87%

“…Moreover, under a positive reset bias (V reset ), the resistance changed from the LRS to the HRS (reset process). 11,12 On the basis of the results from the I-V characteristics, the Al/PCMO sample exhibited a larger operation voltage ratio (¼V set /V reset ) and a larger on/off ratio (the ratio between the conductances in the LRS and HRS at the read voltage), as shown in Figs. 3(a)-3(e).…”

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confidence: 95%

“…[10][11][12][13][15][16][17] Even though each synapse device has its advantages, the synapse device needs a simple two-terminal structure for high density, low-power operation, an analogous conductance change, and reliable characteristics for the implementation of the biological-brain-like S-HNN. 5 In these respects, ReRAM can be a promising candidate.…”

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confidence: 99%

“…1(a). 11,12 When the pre-neuron spike is applied before the post-neuron spike, the conductance of the PCMO-synapse increases (potentiation). On the contrary, the conductance of the PCMO-synapse decreases when the post-neuron spike is applied before the preneuron spike (depression).…”

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confidence: 99%

“…In contrast to depression, the oxygen atoms of the induced oxide move back to PCMO during potentiation, and the conductance is changed from low to high when a negative bias is applied to the TE. 11,12,[21][22][23][24] Considering an implementation of the S-HNN including a high-density and power-efficient synapse device, the redox reaction is the main key factor for improving the synaptic characteristics of the PCMO-synapse. In other words, the redox reaction between the reactive TE and the PCMO layer needs to be well-modified to obtain improved synaptic characteristics.…”

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confidence: 99%

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Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device

Lee

Moon

Park

et al. 2015

Applied Physics Letters

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The characteristics of Pr0.7Ca0.3MnO3 (PCMO)-based resistive change memory were evaluated as a synapse device for a emerging computing system inspired by a biological brain. The evaluated samples structured with various reactive top electrodes exhibited a dependence on the metal-oxide free energy. More conductance states which can improve the performance of the brain-inspired computing system were achieved in a sample having a low metal-oxide free energy. During the increase and decrease in the conductance, the low metal-oxide free energy also resulted in an asymmetric conductance change leading to degradation in the computational accuracy of the brain-inspired computing system. The results demonstrated a trade-off between the number of conductance states and the variation in the conductance change in the PCMO-based synapse device.

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confidence: 87%

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confidence: 95%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device

Lee

Moon

Park

et al. 2015

Applied Physics Letters

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Resistive‐Switching Memory

Ielmini

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Resistive‐switching random‐access memory (RRAM) based on ion migration in insulating layers might revolutionize future nanoelectronic circuits for both memory and logic. The high‐speed, low‐power change of resistance in RRAM can be exploited not only for data storage but also for reconfiguration of programmable logic circuits and for neuromorphic computation. In this review, the strengths and limitations of RRAM will be discussed. First, the RRAM concept will be reviewed in terms of memory operation and physical mechanisms for switching. The RRAM architectures will be discussed with emphasis on the crossbar array structure allowing for high density and reliable operation through proper selector devices. Finally, the RRAM applications in computing systems will be reviewed, addressing the RRAM switch in field‐programmable gate array (FPGA) and neuromorphic circuits.

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Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Arndt

Borgatti

Offi

et al. 2017

Adv Funct Materials

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Resistive random access memory is a promising, energy-efficient, low-power "storage class memory" technology that has the potential to replace both flash storage and on-chip dynamic memory. While the most widely employed systems exhibit filamentary resistive switching, interface-type switching systems based on a tunable tunnel barrier are of increasing interest. They suffer less from the variability induced by the stochastic filament formation process and the choice of the tunnel barrier thickness offers the possibility to adapt the memory device current to the given circuit requirements. Heterostructures consisting of a yttria-stabilized zirconia (YSZ) tunnel barrier and a praseodymium calcium manganite (PCMO) layer are employed. Instead of spatially localized filaments, the resistive switching process occurs underneath the whole electrode. By employing a combination of electrical measurements, in operando hard X-ray photoelectron spectroscopy and electron energy loss spectroscopy, it is revealed that an exchange of oxygen ions between PCMO and YSZ causes an electrostatic modulation of the effective height of the YSZ tunnel barrier and is thereby the underlying mechanism for resistive switching in these devices.

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RRAM-based synapse for neuromorphic system with pattern recognition function

Cited by 159 publications

References 4 publications

Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device

Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device

Resistive‐Switching Memory

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

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