RRAM Cross-Point Arrays

Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors

“…The recent surge in technological and commercial interest in transition-metal-oxide memristors, especially those utilizing hafnium oxide as the switching material, is accompanied by urgent efforts to formulate a compact predictive model of their behavior in large-scale integrated circuits. − Several efforts in this direction include first-principles and analytical modeling, ,, materials characterization, ,, and circuit characterization and modeling. , The resultant models are incomplete and controversial owing to a lack of understanding of the nanoscale physicochemical forces that determine atomic motions during switching, particularly with regard to the presence and sign of temperature-gradient-driven thermophoresis of oxygen atoms and quantification of the concentration-gradient-driven Fick diffusion. ,,,, Direct in situ and in operando studies of localized atomic motion during memristor switching can resolve these issues and improve our modeling, but such observations face steep experimental challenges due to the extremely high resolution and sensitivity required to detect atomic motions inside a functioning cell. ,,, …”

Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors

“…The Memristors are frontrunners for upcoming-generation storage-class memory. 1,2 Cell-level integration of non-volatile storage, current limiting capability and tunable electrical isolation will directly address critical memory performance challenges such as operating power, data density and circuit overheads. [3][4][5] Integration of multiple materials and device engineering to achieve such enhanced memristor performance is an active area of research.…”