RTD-based reconfigurable logic gates for programmable logic array applications

Bae, Donghyeok; Park, Jaehong; Kim, Maengkyu; Jeong, Yongrok; Yang, Kyounghoon

doi:10.1109/iciprm.2016.7528573

Cited by 2 publications

(2 citation statements)

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“…Because the negative differential resistance (NDR) circuit has a special current-voltage (I-V) curve, it has been used in many digital and analog circuits after decades of development. In many NDR-based applications, its most special theoretical basis is a so-called monostable-bistable transmission logic element (MOBILE) [1]- [3]. The MOBILE is usually composed of two NDR circuits in series.…”

Section: Introductionmentioning

confidence: 99%

Design and Implementation of Full Adder Using Negative Differential Resistance Circuits Based on CMOS Process

Gan,

Zhang

2024

Preprint

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We demonstrate a full adder design based on several MOS-NDR circuits connected in series and in parallel. A basic MOS-NDR circuit is made of thee standard Si-based metal-oxide-semiconductor field-effect-transistor (MOSFET) devices. By adjusting the appropriate parameters of the gate width of the MOSFET, the Λ-type negative differential resistance (NDR) characteristic can be presented in its combined current-voltage (I-V) curve. The operating principle of this 1-bit full adder is based on the theory of monostable-bistable transmission logic gate (MOBILE). The bias voltage of this circuit is a clock signal, and its output voltage is a low or high logic level determined by the relative current peak conditions of the load and driver components of the MOBILE circuit. Most of the NDR-based applications designed in the general literature use resonant tunnel diode (RTD) devices as the main components. Compared with RTD device, our MOS-NDR circuit can be designed with standard CMOS process and simulated with HSPICE. We implement this full adder using 0.18 µm standard CMOS process.

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Section: Introductionmentioning

confidence: 99%

Design and Implementation of Full Adder Using Negative Differential Resistance Circuits Based on CMOS Process

Gan,

Zhang

2024

Preprint

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“…The most famous NDR device is the resonant tunnelling diode (RTD). The RTD can be combined with three terminal devices to obtain the programmable NDR device, which is used to implement programmable logic circuits [1,2]. Unfortunately, fabrication of RTDs is complex and expensive.…”

mentioning

confidence: 99%

Programmable negative differential resistance device using FED

Sheikhian

2018

Electron. lett.

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A novel programmable negative differential resistance (NDR) device based on the field-effect diode is proposed. The field-effect diode (FED) is a gated diode and compatible with semiconductor on insulator (SOI) CMOS technology. Semiconductor device simulator tools are used to simulate the structure of the FED. Then, it is employed to design the programmable NDR device. The operating principles of this new device are similar to the comparable MOSFET device. The proposed design is a unique device that consists of only three transistors and can be programmed by an isolated gate.

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RTD-based reconfigurable logic gates for programmable logic array applications

Cited by 2 publications

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Design and Implementation of Full Adder Using Negative Differential Resistance Circuits Based on CMOS Process

Design and Implementation of Full Adder Using Negative Differential Resistance Circuits Based on CMOS Process

Programmable negative differential resistance device using FED

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