Rubidium focused ion beam induced platinum deposition

Li, Y.; Xu, Sheng; Sezen, Meltem; Bakan, Feray; Vredenbregt, E.J.D.

doi:10.1116/6.0002609

Cited by 4 publications

(3 citation statements)

References 16 publications

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“…Previous studies have shown that the composition and structure of materials created by FIBID respond to the identity of the ion beam. Thus, at an incident energy of 8.5 keV and an ion flux of 7.0 pA, Rb + -induced deposition generated Pt films with a composition of 25% C, 20% O, 49% Pt, and 5% Rb, whereas Ga + -induced deposition under similar conditions (8.0 keV, 8.5 pA) resulted in Pt films with a composition of 22% C, 14% O, 37% Pt, and 27% Ga. 27 This also underscores the fact that in Ga + FIBID, the grown deposits often contain significant Ga contamination, affecting properties such as conductivity. 34 In Ar + FIBID, ion implantation becomes negligible as gaseous Ar escapes during deposition.…”

Section: ■ Introductionmentioning

confidence: 89%

“…Trimethyl(methylcyclopentadienyl)platinum(IV) (Me 3 PtCpMe, 99%) was purchased from Strem Chemicals and purified by several freeze–pump–thaw cycles until impurities such as H 2 O and air (N 2 and O 2 ) were no longer detected by MS. A cooled, inert, 15 × 15 mm 2 tantalum/tantalum oxide substrate (200 ± 5 K) was exposed to Me 3 PtCpMe vapor to produce nanometer-scale thick films of precursor molecules, as determined by the attenuation of the substrate (Ta 4f, IMFP = 1.7 nm) signal in X-ray photoelectron spectroscopy (XPS) as shown in Figure S1 in the Supporting Information. ,, At this temperature, Me 3 PtCpMe adsorbs to the substrate surface where the precursor film can be subjected to ion beam irradiation without the risk of thermal degradation or desorption. Based on other studies, we have assumed that the Pt films formed by IBID of Me 3 PtCpMe in this study are homogeneous. ,− …”

Section: Methodsmentioning

confidence: 99%

“…Ga ion-induced deposition of Pt is considered the industry standard and is employed in many focused ion beam systems to prepare protective Pt films when extracting lamella for transmission electron microscopy (TEM) or etching material for cross-sectional scanning electron microscopy (SEM). However, the Pt film composition varies significantly during Ga + -FIBID when the ion energy and/or the ion flux is altered. − For example, De Teresa et al reported that when the Ga + ion energy is varied from 5 to 30 keV, the Pt content in nanodeposits decreases from 27 to 17%, while the C content remains >60% and the Ga content remains ≈10% . In contrast, Puretz and Swanson reported that use of 25 keV Ga + resulted in Pt deposits with a composition of 37% Pt, 47% C, and 13% Ga .…”

Section: Introductionmentioning

confidence: 99%

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Reactions of Ions with Adsorbed Me₃PtCpMe: The Role of Ion Identity

Abdel-Rahman,

Eckhert,

McElwee-White

et al. 2024

J. Phys. Chem. C

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In focused ion-beam-induced deposition (FIBID) processes, the deposition rate and deposit composition are determined by the interplay between ion-induced deposition and sputtering of the deposited atoms. To provide independent insights into these two facets of FIBID, an ultrahigh vacuum (UHV) surface science approach employing in situ X-ray photoelectron spectroscopy (XPS) and mass spectrometry (MS) has been used to study how the identity of incident ions (Z = He, Ne, Ar, H 2 or D 2 ) influences ioninduced (i) deposition from adsorbed Me 3 PtCpMe and (ii) sputtering of the PtC x films created from Me 3 PtCpMe. For each of the ions studied, the initial decomposition/deposition step could be described as Me 3 PtCpMe (ads) + Z (g) + → PtC 9−x(ads) + xCH 4(g) + H 2(g) although the rate and extent of carbon loss from the Me 3 PtCpMe precursor depended on the ion identity, with heavier ions (Ar + , Ne + ) leading to faster and more extensive fragmentation. For the heavier ions, these findings were ascribed to direct momentum/energy transfer between incident ions and adsorbed precursor molecules, while for the lighter ions, there is an increasing contribution from secondary electrons generated by ion−substrate interactions. While the Pt atom purity associated with ion-induced precursor decomposition was lower for the lighter ions, ioninduced sputtering of PtC x films by lighter ions produced the greatest increase in metal content (i.e., purity), due to the extremely poor mass match with Pt. Indeed, sputtering of nanometer-thick PtC x films by H 2 + /D 2 + produced essentially pure Pt films, as measured by XPS. Increasing the substrate temperature during sputtering, however, inhibited the purification process. The results of these findings in the context of FIBID, conducted in the presence of a constant partial pressure of precursor molecules, are also discussed.

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Section: ■ Introductionmentioning

confidence: 89%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Reactions of Ions with Adsorbed Me₃PtCpMe: The Role of Ion Identity

Abdel-Rahman,

Eckhert,

McElwee-White

et al. 2024

J. Phys. Chem. C

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Study of surface damage in silicon by irradiation with focused rubidium ions using a cold-atom ion source

Verheijen

et al. 2023

Journal of Vacuum Science &Amp; Technology B

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Cold-atom ion sources have been developed and commercialized as alternative sources for focused ion beams (FIBs). So far, applications and related research have not been widely reported. In this paper, a prototype rubidium FIB is used to study the irradiation damage of 8.5 keV beam energy Rb+ ions on silicon to examine the suitability of rubidium for nanomachining applications. Transmission electron microscopy combined with energy dispersive x-ray spectroscopy is applied to silicon samples irradiated by different doses of rubidium ions. The experimental results show a duplex damage layer consisting of an outer layer of oxidation without Rb and an inner layer containing Rb mostly at the interface to the underlying Si substrate. The steady-state damage layer is measured to be 23.2(±0.3) nm thick with a rubidium staining level of 7(±1) atomic percentage.

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Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

Abdel-Rahman,

Eckhert,

Chaudhary

et al. 2024

Beilstein J. Nanotechnol.

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Ion beam-induced deposition (IBID) using Pt(CO)2Cl2 and Pt(CO)2Br2 as precursors has been studied with ultrahigh-vacuum (UHV) surface science techniques to provide insights into the elementary reaction steps involved in deposition, complemented by analysis of deposits formed under steady-state conditions. X-ray photoelectron spectroscopy (XPS) and mass spectrometry data from monolayer thick films of Pt(CO)2Cl2 and Pt(CO)2Br2 exposed to 3 keV Ar+, He+, and H2+ ions indicate that deposition is initiated by the desorption of both CO ligands, a process ascribed to momentum transfer from the incident ion to adsorbed precursor molecules. This precursor decomposition step is accompanied by a decrease in the oxidation state of the Pt(II) atoms and, in IBID, represents the elementary reaction step that converts the molecular precursor into an involatile PtX2 species. Upon further ion irradiation these PtCl2 or PtBr2 species experience ion-induced sputtering. The difference between halogen and Pt sputter rates leads to a critical ion dose at which only Pt remains in the film. A comparison of the different ion/precursor combinations studied revealed that this sequence of elementary reaction steps is invariant, although the rates of CO desorption and subsequent physical sputtering were greatest for the heaviest (Ar+) ions. The ability of IBID to produce pure Pt films was confirmed by AES and XPS analysis of thin film deposits created by Ar+/Pt(CO)2Cl2, demonstrating the ability of data acquired from fundamental UHV surface science studies to provide insights that can be used to better understand the interactions between ions and precursors during IBID from inorganic precursors.

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Rubidium focused ion beam induced platinum deposition

Cited by 4 publications

References 16 publications

Reactions of Ions with Adsorbed Me₃PtCpMe: The Role of Ion Identity

Reactions of Ions with Adsorbed Me₃PtCpMe: The Role of Ion Identity

Study of surface damage in silicon by irradiation with focused rubidium ions using a cold-atom ion source

Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

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Rubidium focused ion beam induced platinum deposition

Cited by 4 publications

References 16 publications

Reactions of Ions with Adsorbed Me3PtCpMe: The Role of Ion Identity

Reactions of Ions with Adsorbed Me3PtCpMe: The Role of Ion Identity

Study of surface damage in silicon by irradiation with focused rubidium ions using a cold-atom ion source

Ion-induced surface reactions and deposition from Pt(CO)2Cl2 and Pt(CO)2Br2

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Reactions of Ions with Adsorbed Me₃PtCpMe: The Role of Ion Identity

Reactions of Ions with Adsorbed Me₃PtCpMe: The Role of Ion Identity

Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂