Rugged HBT Class-C power amplifiers with base-emitter clamping

Luo, Xi; Haldar, Subrata; Hwang, J.C.M.

doi:10.1109/mwsym.2011.5972559

Cited by 2 publications

(2 citation statements)

References 8 publications

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“…The PA can be damaged when a load mismatch occurs, therefore the PA's ruggedness was a main concern for Tx chain in mobile handsets. For this reason, many efforts were made to improve it and solutions for sufficient ruggedness were provided [1][2][3][4][5][6][7][8][9][10][11][12][13], including: Clamping circuit [1][2][3], resistive emitter ballasting [4], closed loop protection technique [1,[5][6][7][8][9][10], high voltage process, and so on. A general ruggedness requirement for PA-duplexer (PAD) modules is to have no damage or permanent performance degradation with a full RF input power drive under high load VSWR conditions at a maximum supply voltage.…”

Section: Introductionmentioning

confidence: 99%

A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization

Jeon¹,

Kang

2019

Electronics

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A ruggedness improved multi-band radio frequency (RF) power amplifier (PA) module applicable to mobile handsets, which are required to survive against a serious load impedance change under extreme power and bias conditions, is presented. In this method, the load impedance of PA is adaptively adjusted with a digitally controlled impedance corrector to keep the PA safe by performing a load mismatch detection. The impedance mismatch detector, impedance corrector, and other RF switches were all integrated into a single integrated circuit (IC) using silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS). For the verification purpose, a 2-stage hetero junction bipolar transistor (HBT) PA module adopting this method was fabricated. At a frequency of 1915 MHz, a collector bias voltage of 4.2 V, and over a wider range of load impedance variation between a VSWR of 1 and a VSWR of 5.5, it did not fail. When this technique was not applied with a voltage standing wave ratio (VSWR) range of 1 to 4, it resulted in an acceptable RF performance degradation of 1% power added efficiency (PAE) in envelope tracking (ET) mode. Moreover, it survived at a bias voltage 1V larger than when the technique was not applied for the same mismatch condition.

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Section: Introductionmentioning

confidence: 99%

A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization

Jeon¹,

Kang

2019

Electronics

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“…In previous generations of handsets, it was general to implement an isolator between the PA module and the handset antenna in order to isolate the amplifier from changes in impedance at the antenna port, which is incompatible with modern handsets due to the size and cost limits [1]. Other solutions including improved process [2,3], resistive emitter ballasting [4], and various open-loop/closed-loop techniques [5][6][7][8][9][10][11][12] have been proposed. Among these solutions, the closed-loop techniques have been developed in various configurations according to the sensing object and the feedback form.…”

Section: Introductionmentioning

confidence: 99%

Software-Based Adaptive Protection Control against Load Mismatch for a Mobile Power Amplifier Module

Jeon¹,

Jung

Kang

2019

Electronics

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A closed-loop protection method for a radio frequency (RF) power amplifier (PA) module applicable to mobile handsets has been introduced. The load impedance of the PA was adaptively sensed by an embedded impedance detector which was digitally controlled and the system adjusted PA power using a feedback circuit to keep the PA safe based on a load mismatch detection. For verification, a two-stage hetero junction bipolar transistor (HBT) PA module for handsets was fabricated and tested against load mismatch. Measurement results showed that the technique could help PA survive at a 0.5V larger collector bias voltage condition than when the technique was not applied for the same mismatch condition with an acceptable RF performance degradation at nominal condition.

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Rugged HBT Class-C power amplifiers with base-emitter clamping

Cited by 2 publications

References 8 publications

A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization

A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization

Software-Based Adaptive Protection Control against Load Mismatch for a Mobile Power Amplifier Module

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