Rugged MMC converter cell for high power applications

Odegard, B.; Weiss, David M.; Wikström, T.; Baumann, Remo

doi:10.1109/epe.2016.7695417

Cited by 14 publications

(10 citation statements)

References 4 publications

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“…Finally, a division of the extracted fundamental voltage and current values identifies the capacitance of each submodule. This methodology is summarized in ( 5)- (6).…”

Section: Update the Filter Parameter P [N]mentioning

confidence: 99%

“…Since component failure is inevitable in power electronic circuits operating over extended periods of time, protective measures must be taken to M. Asoodar (corresponding author), C. Danielsson, and R. Söderström are with Hitachi-ABB Power Grids, Sweden (email: asoodar@kth.se) M. Nahalparvari avoid stoppage of operation as a result of component failure. These protective measures are realized through additional protective hardware [6], or via health estimation of vulnerable components [7]. The focus of this paper is on creating a reliable protective measure for dc-link capacitors in MMCs through online estimation of their health state.…”

Section: Introductionmentioning

confidence: 99%

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Online Health Monitoring of DC-Link Capacitors in Modular Multilevel Converters for FACTS and HVDC Applications

Asoodar

Nahalparvari

Danielsson

et al. 2021

IEEE Trans. Power Electron.

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This paper presents an online health monitoring scheme for dc capacitors in modular multilevel converters (MMCs). The health monitoring algorithm is based on detecting changes in the dc capacitance value over time. The proposed algorithm only utilizes measurements that are typically available in flexible alternating current transmission systems (FACTS) and high-voltage direct current (HVDC) applications. Hence, in the proposed estimation method, no additional sensors are used. The estimation scheme considers the presence of noise in voltage and current measurements, and utilizes a recursive least square (RLS) estimator in conjunction with a special low-pass filter to minimize the estimation errors. Simulation results of a hardware replica, as well as experimental results on a low-power MMC prototype show that the proposed scheme can identify the dclink capacitance value with a maximum error of 1%.

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“…Finally, a division of the extracted fundamental voltage and current values identifies the capacitance of each submodule. This methodology is summarized in ( 5)- (6).…”

Section: Update the Filter Parameter P [N]mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Online Health Monitoring of DC-Link Capacitors in Modular Multilevel Converters for FACTS and HVDC Applications

Asoodar

Nahalparvari

Danielsson

et al. 2021

IEEE Trans. Power Electron.

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“…Semiconductor [41] Fig. 1: Structural hierarchy of high-power electronic components in HVdc VSCs (photographs courtesy of Hitachi ABB Power Grids).…”

Section: Converter Clustermentioning

confidence: 99%

“…Robust SM implementations R3 with IGCTs have been presented in [41], [42]. The auxiliary resonant commutated pole (ARCP) circuit can be used to soft-switch IGCT and reduce the need for L di/dt [43], as shown in Fig.…”

Section: High-power Semiconductor Devicesmentioning

confidence: 99%

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Jacobs

Heinig

Johannesson

et al. 2021

IEEE Trans. Power Electron.

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Recent advancements in silicon carbide (SiC) power semiconductor technology enable developments in the high-power sector, e.g., high-voltage direct current (HVdc) converters for transmission, where today silicon (Si) devices are state-of-theart. New submodule (SM) topologies for modular multilevel converters (MMCs) offer benefits in combination with these new SiC semiconductors. This paper reviews developments in both fields, SiC power semiconductor devices and SM topologies, and evaluates their combined performance in relation to core requirements for HVdc converters: grid code compliance, reliability, and cost.A detailed comparison of SM topologies regarding their structural properties, design and control complexity, voltage capability, losses, and fault handling is given. Alternatives to state-of-the-art SMs with Si insulated-gate bipolar transistors (IGBTs) are proposed, and several promising design approaches are discussed. Most advantages can be gained from three technology features. Firstly, SM bipolar capability enables dc fault handling and reduced energy storage requirements. Secondly, SM topologies with parallel conduction paths in combination with SiC metal-oxide-semiconductor field effect transistors (MOSFETs) offer reduced losses. Thirdly, a higher SM voltage enabled by higher blocking voltage of SiC devices results in reduced converter complexity. For the latter, ultra-high-voltage (UHV) bipolar devices, such as SiC IGBTs and SiC gate turn-off thyristors (GTOs), are envisioned. Index Terms-HVdc transmission, modular multilevel converter, power semiconductor devices, silicon carbide, submodules. I. INTRODUCTIONH VDC transmission technology requires integration into the existing alternating current (ac) grid. The conversion is performed via high-power converters. The modular multilevel converter (MMC) is a versatile and flexible topology with several options for optimization. MMCs have been intensively investigated since the early 2000's. It was identified, that modularity, scalability, built-in redundancy, and harmonic performance are advantageous for meeting widely varying requirements in grid applications. Compared to previous voltage source converters (VSC), the need for bulky harmonic filters is Keijo Jacobs

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“…For such applications and because of the low switching frequency of the individual semiconductor power switches provided by the large number of levels, the replacement of the insulated-gate bipolar transistor (IGBT) by the integrated gatecommutated thyristor (IGCT) appears to be advantageous [5] because the IGCT has low on-state losses, inherent short-circuit failure-mode (SCFM) and higher reliability [6][7][8] with improved thermal cycling capabilities [9,10]. The use of this device for…”

Section: Introductionmentioning

confidence: 99%

Selection of an IGCT for multilevel converters dedicated to high‐voltage direct current grid connection of offshore wind‐farms

Ladoux

Sanchez

Cornet

et al. 2021

IET Power Electronics

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Grid connection of remote offshore wind-parks uses high-voltage direct current technology and in order to reduce costs and losses and maximise profitability, semiconductor power losses must be minimised. To properly choose the semiconductors, it is necessary to estimate their losses for a large number of operating conditions. This article deals with a modelling approach to calculate power losses for many such operating conditions, based on measured semiconductor characteristics and the chosen multilevel modulation strategy. The case of the integrated gate-commutated thyristor is considered because, for a given device rating, it is possible to select an integrated gate-commutated thyristor benefiting from the best trade-off between on-state losses and turn-off losses, thus minimising the power losses of the two end-stations.

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Rugged MMC converter cell for high power applications

Cited by 14 publications

References 4 publications

Online Health Monitoring of DC-Link Capacitors in Modular Multilevel Converters for FACTS and HVDC Applications

Online Health Monitoring of DC-Link Capacitors in Modular Multilevel Converters for FACTS and HVDC Applications

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Selection of an IGCT for multilevel converters dedicated to high‐voltage direct current grid connection of offshore wind‐farms

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