Run-Away Energetic Reactions in the Exhaust of Deposition Reactors

Abstract

A model is developed to simulate the processes that may cause runaway exothermic reactions in the downstream of typical deposition reactors used in semiconductor manufacturing. This process model takes into account various modes of mass and heat transport as well as chemical reactions and provides insight into the key mechanisms that trigger the uncontrolled energetic reactions and cause the formation of potentially damaging hotspots. Using the developed model, a parametric study was conducted to analyze the effects of various system and operating conditions. In particular, the effects of the gaseous reactants concentrations and incoming temperature, the extent of accumulation of deposits, and the gas flow rate, and the reactions activation energy and heat of reaction are analyzed and the location and time of hot spot formation for each case are determined. The results are useful in developing strategies for mitigating the occurrence of the damaging energetic events.