Russia's sorry infrastructure

Oberg, James

doi:10.1109/6.887596

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2011

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“…InP based process technology represents a disruptive technology platform because it can be used to build both ultra-fast electronics as well as photonics integrated circuits; there by truly integrate the manipulation of both electrical and optical signals in a signal chip. In particular 'InP-based HBT is ideally suited for all high speed and low power digital -analog application, militarily and commercially [1][2][3][4][5][6]. However, access to InP-based process technology has been very limited.…”

Section: Introductionmentioning

confidence: 99%

Measuring the Changes in InP Morphological and Electrical Specifications Caused by Oxygen Ion Implantation

Ramezani

Hantezadeh

Ghoranneviss

et al. 2011

AMR

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This paper is the results of oxygen ion implantation on morphological and electrical properties of indium phosphate (InP) semiconductor wafers. The oxygen ions were implanted at 30 keV and various doses in the range between 5×10 15 to 5×10 17 ions/cm2 and at nearly room temperature. The changes in surface roughness and resistivity before and after the implantation is studied using atomic force microscopy (AFM) and four-point probes technique, respectively. The results show that the resistivity is depend on the ion implantation dose. In addition, the RMS roughness of implanted samples dramatically increases by accumulation of oxygen ion dose.

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Section: Introductionmentioning

confidence: 99%