2009
DOI: 10.1016/j.apsusc.2008.10.072
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Ruthenium adsorption and diffusion on the GaN(0001) surface

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Cited by 11 publications
(3 citation statements)
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“…Separation procedures including volatilization, coprecipitation, solvent extraction, sorption, and chromatography can be used to isolate and preconcentrate Ru from multicomponent samples containing noble and base metals (Balcerzak, 2002;Hong and Grubbs, 2007;Lopez et al, 2009;Knight et al, 2010;Kokate and Kuchekar, 2010). Separation of Ru has also been achieved by coprecipitation, sequential distillation, precipitation, and adsorption onto inorganic materials (Gandon et al, 1993;Granados et al, 2004;Rathore et al, 2004;ElAbsy et al, 2005).…”
Section: Introductionmentioning
confidence: 96%
“…Separation procedures including volatilization, coprecipitation, solvent extraction, sorption, and chromatography can be used to isolate and preconcentrate Ru from multicomponent samples containing noble and base metals (Balcerzak, 2002;Hong and Grubbs, 2007;Lopez et al, 2009;Knight et al, 2010;Kokate and Kuchekar, 2010). Separation of Ru has also been achieved by coprecipitation, sequential distillation, precipitation, and adsorption onto inorganic materials (Gandon et al, 1993;Granados et al, 2004;Rathore et al, 2004;ElAbsy et al, 2005).…”
Section: Introductionmentioning
confidence: 96%
“…The surface phase diagram of the GaN (0001)‐(2 × 2) surface was investigated using ab initio calculations, which indicated the stability of the (2 × 2) surface in a certain temperature range . Ruthenium adsorption and diffusion on the GaN (0001) surface were investigated by first‐principles calculation, which found that Ru‐H 3 and Ru‐T 4 are the most energetically favored structures and the diffusion barrier from the H 3 site to T 4 site is 0.612 eV . There are a lot of studies focusing on investigating the characteristics of GaN‐based materials for sensors.…”
Section: Introductionmentioning
confidence: 99%
“…[28] Ruthenium adsorption and diffusion on the GaN (0001) surface were investigated by first-principles calculation, which found that Ru-H 3 and Ru-T 4 are the most energetically favored structures and the diffusion barrier from the H 3 site to T 4 site is 0.612 eV. [29] There are a lot of studies focusing on investigating the characteristics of GaN-based materials for sensors. Li et al investigated the adsorption of O 2 on the GaN (0001) surface using DFT.…”
Section: Introductionmentioning
confidence: 99%