2003
DOI: 10.1149/1.1592374
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Ruthenium Film with High Nuclear Density Deposited by MOCVD Using a Novel Liquid Precursor

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Cited by 57 publications
(48 citation statements)
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“…Ru thin films were deposited on SiO 2 /TiAlN/SiO 2 /(100)Si substrates by MOCVD and rf magnetron sputtering method. For MOCVD, Ru(C 7 H 11 )(C 7 H 9 ) [(2,4-dimethylpentadienyl)(ethylcyclopentadienyl) ruthenium, DER] (Tosoh Co.) was used as Ru sources, while oxygen was used as an oxidants gas [12,13]. The thickness conformability of the PZT films on the trenched substrates was observed by field-emission transmittance and scanning electron microcopies (FE-TEM and FE-SEM).…”
Section: Methodsmentioning
confidence: 99%
“…Ru thin films were deposited on SiO 2 /TiAlN/SiO 2 /(100)Si substrates by MOCVD and rf magnetron sputtering method. For MOCVD, Ru(C 7 H 11 )(C 7 H 9 ) [(2,4-dimethylpentadienyl)(ethylcyclopentadienyl) ruthenium, DER] (Tosoh Co.) was used as Ru sources, while oxygen was used as an oxidants gas [12,13]. The thickness conformability of the PZT films on the trenched substrates was observed by field-emission transmittance and scanning electron microcopies (FE-TEM and FE-SEM).…”
Section: Methodsmentioning
confidence: 99%
“…An alternative scheme is to use ferroelectric films as the gate in field effect transistors [11,12], but these suffer from retention loss (diminishing stored charge) due to the need to ground the gate during read operations. The work at IMEC [13] and the Samsung-Tokyo Institute of Technology collaboration [14] has resulted in some commercial device-worthy parts; but at present there is no model for the nanodomain structure in such [3D] ferroelectric nano-devices. The switching speed of such devices and their coercive voltages depend in turn upon the nano-domain widths and geometries.…”
Section: Future Requirementsmentioning
confidence: 99%
“…Toulon), [4,13] and the DRAM (dynamic random access memory) trench filled with Ru in Fig. 2, from the Samsung-Tokyo Institute of Technology collaboration [5,14].…”
Section: Lithographymentioning
confidence: 99%
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“…Recent film growth studies indicate that the DER precursor deposits films with better characteristics than Ru(EtCp) 2 . DER results in a higher nucleation density, a lower incubation time, and smoother films as compared with Ru(EtCp) 2 [12,13]; it is believed that the higher reactivity of the DMPD ligand versus the EtCp ligand has resulted in these improved properties [14]. Although film growth studies with DER show promising results, the surface chemistry of DER is largely unexplored.…”
Section: Introductionmentioning
confidence: 99%