Ruthenium Films Deposited by Liquid‐Delivery MOCVD Using Bis(ethylcyclopentadienyl)ruthenium with Toluene as the Solvent

Abstract

Pure ruthenium thin films are prepared by liquid-delivery metal-organic (MO)CVD using bis(ethylcyclopentadienyl)ruthenium (Ru(EtCp) 2 ) with toluene as the solvent. The deposition of Ru thin films is carried out on various substrates at temperatures in the range 330-460°C via the oxygen-assisted pyrolysis of Ru(EtCp) 2 . Ru in a single phase can be obtained under all growth conditions. The reaction kinetics, film composition, film morphology, mechanical properties, and electrical properties of deposited Ru films were investigated. The films obtained have a low resistivity value of 20 lX cm, low stress values of about 70 MPa, and a preferred crystalline orientation (002), offering potential application in storage-capacitor electrodes.

Thermal Stability and Sublimation Pressures of Some Ruthenocene Compounds

“…In addition, they are of importance in the manufacture of bottom electrodes in the filed of microelectronics [ 2 ]. It was shown that several ruthenium-based sandwich compounds like ruthenocene ([( η 5 ‑C 5 H 5 ) 2 Ru]) [ 3 , 4 , 5 , 6 ], bis(ethylcyclopentadienyl) ruthenium ([( η 5 ‑C 5 H 4 Et) 2 Ru]); 1a [ 7 , 8 , 9 , 10 ], tris(2,4-pentanedionato)ruthenium(III) ([(C 5 H 7 O 2 ) 3 Ru]) [ 11 ], and tris(2,2,6,6-tetramethyl-3,5-heptanedionato)ruthenium(III) ([(C 11 H 19 O 2 ) 3 Ru]) [ 11 , 12 ] can be successfully used as precursor molecules for the deposition of ruthenium and/or ruthenium oxide layers applying either CVD (= chemical vapor deposition) and ALD (= atomic layer deposition) processes (when volatile), or dip- and spin-coating techniques (when non-volatile) [ 13 ]. One disadvantage associated with this family of compounds is that depending on the nature of the cyclopentadienyl-bonded organics groups, the respective films may contain (some) carbon impurities [ 13 ].…”

Synthesis and Characterization of Ruthenium Amidinate Complexes as Precursors for Vapor Deposition

“…That means at higher temperature the N-N single bond and all the N-C single bonds can freely rotate. The 13 C NMR spectra at room temperature also shows four very close chemical shifts with resonances at 25.2, 25.0, 20.9 and 20.6, which correspond to 4 different methyl groups in the iPr fragments. Subsequent elemental analysis matched the assigned structure.…”

“…They are basically divided into *Address correspondence to these authors at the Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA; E-mail: Gordon@chemistry.harvard.edu two categories: ruthenium organometallic compounds containing Ru-C bonds such as Ru 3 (CO) 12 [10] and ruthenocenes [11,12] such as Ru(Cp) 2 and Ru(EtCp) 2 [13] (Cp = cyclopentadienyl); and ruthenium -diketonates [14] or Ru(CO) 2 ( -diketonates) 2 [15]. These precursors lack sufficient reactivity with common second reactants such as hydrogen, water, and ammonia.…”

Ruthenium complexes as precursors for chemical vapor-deposition (CVD)

“…In the context of the present topic, Ru shall be regarded: Substrates like SiO 2 /Si were used mainly for pure Ru lms deposition because of slow deposition rates on other substrates. 52 Hones et al established the growth kinetic of thin ruthenium oxide lms from [Ru(tfa) 3 ] in a mixture of oxygen and water which follows a unimolecular reaction of the Langmuir-Hinshelwood-type. The reaction pathways of precursor molecule fragmentation is depicted in Fig.…”