Rutherford backscattering spectrometry channeling study of ion-irradiated 6H-SiC

Jiang, Weilin; Weber, William J.; Thevuthasan, Suntharampillai; McCready, David E.

doi:10.1002/(sici)1096-9918(199904)27:4<179::aid-sia459>3.0.co;2-1

Cited by 27 publications

(7 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In general, no significant annealing effects occurred up to 970 K in any of the irradiated samples, which covered the full range of atomic disorder in this study. This is in contrast to gradual reduction of Si atomic disorder in Si + [10], C + [9] and He + [13] implanted 6H-SiC in a comparable annealing temperature range. The thermal stability of the defects in GaN is not yet fully understood.…”

Section: Resultssupporting

confidence: 69%

See 1 more Smart Citation

Effect of Oxygen Ion Implantation in Gallium Nitride

Jiang¹,

Weber²,

Thevuthasan³

et al. 1999

MRS Internet j. nitride semicond. res.

Self Cite

View full text Add to dashboard Cite

Epitaxial single crystal GaN films (2.0 µm thick) were implanted 60° off the <0001> surface normal with 600 keV O + ions at 190 or 210 K over a range of ion fluences from 4.8×10 17 to 5.0×10 20 ions/m 2 . The implantation damage, as determined by in-situ Rutherford Backscattering Spectrometry in a <0001> channeling geometry (RBS/C), ranged from dilute defects up to the formation of a disorder saturation state that was not fully amorphous. The relative disorder on the Ga sublattice exhibited a sigmoidal dependence on ion fluence. Results show that GaN crystals are extremely resistant to the ion implantation damage as compared to other ceramic materials like SiC. An asymmetric shape in the angular scan curve around the <0001> axis, which might be associated with the Ga lattice distortion in the crystal structure, was observed for the asirradiated material to the highest ion fluence (5.0×1020 O + /m 2 ) at 210 K. Comparisons of Ga disorder depth-profiles from the experiment and SRIM97 simulations suggest that the damage peaks shift to greater depths at the low irradiation temperature (210 K). Significant recovery of these defects was not observed in the isochronal annealing steps (20-min) up to 970 K.

show abstract

Section: Resultssupporting

confidence: 69%

“…In contrast, almost two orders of magnitude lower C + [9] or Si + [10] (Fig. 1) under the assumption of linear dechanneling approximation [9,12], and are shown in Fig. 2 as a function of depth.…”

Section: Resultsmentioning

confidence: 99%

Effect of Oxygen Ion Implantation in Gallium Nitride

Jiang¹,

Weber²,

Thevuthasan³

et al. 1999

MRS Internet j. nitride semicond. res.

Self Cite

View full text Add to dashboard Cite

show abstract

“…where h(x) is the yield ratio of the channeling spectrum from the C-irradiated film to the random spectrum at depth x and χ r (x) is the random fraction. [27,28] Using a linear dechanneling approximation, [27,28] the maximum lattice disorder at damage peak was determined using Equation (2). Also, the disorder level in the film was determined from the net area of the damage peak normalized to that produced by C + irradiation to 1.8 × 10 15 ions/cm 2 .…”

Section: Data Analysis and Results Discussionmentioning

confidence: 99%

Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C⁺ and He⁺ ions

Zhang

Jiang

Pan

et al. 2019

J Raman Spectroscopy

View full text Add to dashboard Cite

This study examines C+ and He+ ion irradiation‐induced amorphization processes in 3C–SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared with their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation‐induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface‐driven amorphization proceeds at comparable rates for C+ and He+ ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.

show abstract

“…Ion-channelling methods based on Rutherford backscattering spectrometry (RBS/C) and TEM are frequently employed [22][23][24][25], whereas spectroscopic tools [26][27][28][29][30][31] which are less destructive give access to structural information. Spectroscopic techniques can also detect some complementary aspects of the transformation between the crystalline and amorphous state.…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy study of heavy-ion-irradiated α-SiC

Sorieul¹,

Costantini²,

Gosmain³

et al. 2006

J. Phys.: Condens. Matter

166

153

View full text Add to dashboard Cite

Raman spectroscopy was used to investigate the structure of ion-irradiated α-SiC single crystals at room temperature and 400 °C. Irradiations induce a decrease of the Raman line intensities related to crystalline SiC, the appearance of several new Si–C vibration bands attributed to the breakdown of the Raman selection rules, and the formation of homonuclear bonds Si–Si and C–C within the SiC network. For low doses, the overall sp3 bond structure and the chemical order may be almost completely conserved. By contrast, the amorphous state shows a strong randomization of the Si–Si, Si–C and C–C bonds. The relative Raman intensity decreases exponentially versus increasing dose due to the absorption of the irradiated layer. The total disorder follows a sigmoidal curve, which is well fitted by the direct impact/defect stimulated model. The chemical disorder expressed as the ratio of C–C bonds to Si–C bonds increases exponentially versus the dose. A clear correlation is established between the total disorder and the chemical disorder. The increase of temperature allows the stabilization of a disordered/distorted state and a limitation of damage accumulation owing to the enhancement of the dynamic annealing.

show abstract

Rutherford backscattering spectrometry channeling study of ion-irradiated 6H-SiC

Cited by 27 publications

References 19 publications

Effect of Oxygen Ion Implantation in Gallium Nitride

Effect of Oxygen Ion Implantation in Gallium Nitride

Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C⁺ and He⁺ ions

Raman spectroscopy study of heavy-ion-irradiated α-SiC

Contact Info

Product

Resources

About

Rutherford backscattering spectrometry channeling study of ion-irradiated 6H-SiC

Cited by 27 publications

References 19 publications

Effect of Oxygen Ion Implantation in Gallium Nitride

Effect of Oxygen Ion Implantation in Gallium Nitride

Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C+ and He+ ions

Raman spectroscopy study of heavy-ion-irradiated α-SiC

Contact Info

Product

Resources

About

Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C⁺ and He⁺ ions