Rutherford Scattering and Channeling—A Useful Combination for Chemical Analysis of Surfaces

Mackintosh, William D.; Davies, John

doi:10.1021/ac60273a724

Cited by 4 publications

(5 citation statements)

References 15 publications

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“…The area of the peak obtained by backscattering from implanted ions is dependent on the number of implanted atoms present. It is possible to obtain the ,00 absolute amounts (7) but for these experiments it was sufficient to compare areas after normalization to the same integrated beam current (i.e., same number of incident particles) to observe any changes in the relative amount of implant occurring during anodization.…”

Section: Methodsmentioning

confidence: 99%

Mobility of Metallic Foreign Atoms during the Anodic Oxidation of Aluminum

Mackintosh

Brown

Plattner

1974

J. Electrochem. Soc.

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Metallic foreign atoms introduced into the surface layers of aluminum specimens are shown to be mobile during anodic oxidation. The direction of motion depends on whether the initial distribution of the foreign atoms is located in aluminum metal under the natural air‐formed oxide or entirely contained within a thin preformed surface film of anodic oxide. For a number of the fifteen elements studied, the rate of motion relative to aluminum ions was determined. The results of these experiments are of intrinsic interest in the eventual understanding of the processes involved and have immediate practical consequences for sectioning techniques which involve anodizing and stripping.

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Section: Methodsmentioning

confidence: 99%

Mobility of Metallic Foreign Atoms during the Anodic Oxidation of Aluminum

Mackintosh

Brown

Plattner

1974

J. Electrochem. Soc.

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“…The basis of the Rutherford scattering technique for surface analysis, for film thickness measurements, and for locating the position of foreign atoms has been described [Ref. (7) and references therein]. The essence of the method is that, if a He ion of known energy (in this case 2 MeV) is scattered from a surface atom, the resultant energy loss can be calculated from the kinematics of the system.…”

Section: Methodsmentioning

confidence: 99%

The Anodic Oxidation of Vanadium:Transport Numbers of Metal and Oxygen and the Metal/Oxygen Ratio in the Oxide Films

Mackintosh

Plattner

1976

J. Electrochem. Soc.

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The techniques of ion implantation and Rutherford backscattering analysis have been used to determine the transport numbers of metal and oxygen during the anodic oxidation of vanadium. These were found to be 0.28 • 0.05 and 0.72 ~ 0.05, respectively. The Rutherford backscattering analysis simultaneously gives the ratio of V/O in the film. This was found to be 0.4 • 0.02 thus indicating that the films are V205. The result was confirmed by use of the nuclear reaction 160 (d,p) 170. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.117.10.200 Downloaded on 2015-06-14 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.117.10.200 Downloaded on 2015-06-14 to IP

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“…The chlorine electrode in molten salts has been studied by some authors (2)(3)(4)(5)(6)(7)(8), but relatively few studies have been made in aqueous solutions (8)(9)(10)(11). Electrode behavior in aqueous solutions is complicated by the formation of a5 oxide layer on the surface of graphite anode during electrolysis of chloride solution because of discharge of H20 and/or OH-with chlorine.…”

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confidence: 99%