Rutile Ti_1-xCo_xO₂-δ p-type Diluted Magnetic Semiconductor Thin Films

Manipulating Electrical Properties of Nanopatterned Double-Barrier Schottky Junctions in Ti/TiOx/Fe Systems

“…The positive MR for the Ti/ATO interface can result from various titanium oxides as found by Gruber and Krautz, including rutile-doped systems, or in titanium thin films deposited on the silicon substrate . Therefore, the origin of the MR in titanium oxide-based systems is a result of the structural disorder in samples.…”

“…Comparing the sign of MR for the whole junction (Figure 8C) with MR for ATO/Fe and Ti/ATO interfaces, one can see that to temperature of 200 K, the main contribution comes from the ATO/Fe interface, at 215 K, both contributions are very close resulting in zero value of MR, and above this temperature, dominating fraction of MR comes from the Ti/ATO interface. The positive MR for the Ti/ATO interface can result from various titanium oxides as found by Gruber and Krautz, 77 including rutile-doped systems, 78 or in titanium thin films deposited on the silicon substrate. 79 Therefore, the origin of the MR in titanium oxide-based systems is a result of the structural disorder in samples.…”