Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO2

Kimura, Hirokazu; Fukumura, Tomoteru; Kawasaki, Masashi; Inaba, Kazuaki; Hasegawa, Tetsuya; Koinuma, Hideomi

doi:10.1063/1.1430856

Cited by 210 publications

(106 citation statements)

References 15 publications

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“…1,2 In the family of DMS systems, room temperature ferromagnetism (RTFM) in transition metal (TM) ion-doped ZnO, SnO 2 , TiO 2 , CeO 2 etc. [3][4][5][6][7][8] have been observed by various researchers. In addition, dilute magnetic dielectrics (DMDs) are also an important area of research due to their enhanced magnetic property at room temperature (RT) and high dielectric constant.…”

Section: Introductionmentioning

confidence: 99%

Microstructural Investigation, Raman and Magnetic Studies on Chemically Synthesized Nanocrystalline Ni-Doped Gadolinium Oxide (Gd1.90Ni0.10O3−δ)

Sarkar

Mandal

Dalal

et al. 2018

Journal of Elec Materi

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Nanocrystalline Ni-doped gadolinium oxide (Gd 1.90 Ni 0.10 O 3Àd , GNO) is synthesized by co-precipitation method. The as-prepared sample is annealed in vacuum at 700°C for 6 h. Analyses of the x-ray diffractogram by Rietveld refinement method, transmission electron microscopy and Raman spectroscopy of GNO recorded at room temperature confirmed the pure crystallographic phase and complete substitution of Ni-ions in Gd 2 O 3 lattice. Magnetization (M) as a function of temperature (T) and magnetic field (H) is measured by a superconducting quantum interference device magnetometer, which suggests the presence of ferromagnetic/antiferromagnetic phases together with a paramagnetic phase. From the M-T curve it can be shown that the ferromagnetic phase dominates over para-/antiferromagnetic phases in the temperature range of 300-100 K, but from 100 K to 50 K, the antiferromagnetic phase dominates over ferro-/paramagnetic phases. Hysteresis loops recorded at different temperatures indicate the presence of weak ferro-/antiferromagnetism, which dominates in the low field region ($ 4000 Oe), above which magnetization increases linearly. The sharp increase of magnetization in M-T curve observed in the temperature range of 50-5 K confirms the presence of dominating ferromagnetic plus paramagnetic phase over antiferromagnetic part. For the first time a combined formula generated from threedimensional (3D) spin wave model and Johnston formula is proposed to analyze the coexistence of different magnetic phases in different temperature ranges. Interestingly, the combined formula successfully explains the co-existence of different magnetic phases along with their contribution at different temperatures. The onset of ferromagnetism in Gd 1.90 Ni 0.10 O 3Àd is explained by oxygen vacancy mediated F-centre exchange (FCE) coupling mechanism.

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Section: Introductionmentioning

confidence: 99%

Microstructural Investigation, Raman and Magnetic Studies on Chemically Synthesized Nanocrystalline Ni-Doped Gadolinium Oxide (Gd1.90Ni0.10O3−δ)

Sarkar

Mandal

Dalal

et al. 2018

Journal of Elec Materi

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“…Mn-doped SnO 2 was reported to show large magnetoresistance at low temperature and paramagnetic behavior [136][137][138]. On the other hand, the same Mn-doped SnO 2 was reported to be ferromagnetic with T C = 340 K [139].…”

Section: Snomentioning

confidence: 99%

Magnetic Oxide Semiconductors

2006

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Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magneto-transport such as anomalous Hall effect are examined from viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO 2 and transition metal-doped ZnO is discussed.

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“…Mn-doped SnO 2 shows a large magnetoresistance and the magnetization behavior is paramagnetic down to 5 K [35]. There have been very few reports on this compound so far.…”

Section: Snomentioning

confidence: 99%

Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

Fukumura

Yamada

Toyosaki

et al. 2004

Applied Surface Science

242

123

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A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS (UFO). Perspectives and possible devices are also given. PACS: 75.50Pp, 75.30Hx, 81.15Fg

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Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO2

Cited by 210 publications

References 15 publications

Microstructural Investigation, Raman and Magnetic Studies on Chemically Synthesized Nanocrystalline Ni-Doped Gadolinium Oxide (Gd1.90Ni0.10O3−δ)

Microstructural Investigation, Raman and Magnetic Studies on Chemically Synthesized Nanocrystalline Ni-Doped Gadolinium Oxide (Gd1.90Ni0.10O3−δ)

Magnetic Oxide Semiconductors

Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

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