S-band wideband gain lasers with 32 channel coverage and launching power 2dBm for WDM-PON

Lee, E.H.; Keh, Y. C.; Kang, Jaeyoung; Bang, Y.C.; Kim, Y.H.; Hwang, Sooman; Shin, Dongjae; Park, S.S.; Lee, J.S.; Lee, J.K.; Oh, Yoon Suk; Jang, Dong-Hoon

doi:10.1109/iciprm.2005.1517573

International Conference on Indium Phosphide and Related Materials, 2005.

DOI: 10.1109/iciprm.2005.1517573

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S-band wideband gain lasers with 32 channel coverage and launching power 2dBm for WDM-PON

E.H. Lee

Y. C. Keh

Jaeyoung Kang

et al.

Abstract: Wncooled ASE-injected WBG-LDs in the S-band are first developed as downstream sources in WDM-PONS. The single WBG-LD covers 100 GHz-spaced 32 channels and allows BERs of lO-''with +2 dBm launching power over 25 km.

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S-band wideband gain lasers with 32 channel coverage and launching power 2dBm for WDM-PON

Abstract: Wncooled ASE-injected WBG-LDs in the S-band are first developed as downstream sources in WDM-PONS. The single WBG-LD covers 100 GHz-spaced 32 channels and allows BERs of lO-''with +2 dBm launching power over 25 km.

Cited by 0 publications

References 2 publications

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