S/In molar ratio effect on the photoconductivity of the sprayed β-In2S3 thin films

Bchiri, Y.; Souissi, R.; Bouricha, B.; Bouguila, N.; Kraini, M.; Vázquez–Vázquez, C.; López‐Quintela, M. Arturo; Alaya, S.

doi:10.1007/s10854-021-07180-y

Cited by 5 publications

(3 citation statements)

References 29 publications

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“…The rise time is defined as the time required for the photodetector to reach 90% of the photocurrent, and the decay time as that one needed to reach 10% of the initial current baseline after switching off the light. In Equations , we give expressions used to calculate the photosensitivity ( S ), the photoresponsivity ( R esp ), and the detectivity ( D ) of the GZO‐based device 36,37 :

\begin{equation}S\ = \frac{{{{I}_{{\mathrm{ph}}}}}}{{{{I}_{{\mathrm{dark}}}}}}\ \end{equation}

\begin{equation}{{R}_{{\mathrm{esp}}}} = \frac{{{{I}_{{\mathrm{ph}}}}}}{{A\ P}}\ \end{equation}

\begin{equation}D = \frac{{{{R}_{{\mathrm{esp}}}}\sqrt A }}{{\sqrt {2{\mathrm{e}}{{{\mathrm{I}}}_{{\mathrm{dark}}}}} }}\ \end{equation}

…”

Section: Resultsmentioning

confidence: 99%

“…The rise time is defined as the time required for the photodetector to reach 90% of the photocurrent, and the decay time as that one needed to reach 10% of the initial current baseline after switching off the light. In Equations 7-9, we give expressions used to calculate the photosensitivity (S), the photoresponsivity (R esp ), and the detectivity (D) of the GZO-based device 36,37 :…”

Section: Photodetection Propertiesmentioning

confidence: 99%

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Interesting UV and visible photodetection properties of GZO‐based device

Rejeb,

Souissi,

Alaya

et al. 2024

Int J Applied Ceramic Tech

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The aim of this study is to investigate the performance of chemically deposited Ga doped ZnO (GZO) thin film for enhanced UV and visible light detection. Transparent thin film was grown on glass substrates by a spray pyrolysis technique. The Ga doping concentration was maintained at 1 at.% in the solution. The influence of gallium concentration in zinc oxide (ZnO) films on structural, morphological, electrical, and optical properties was studied.Measurements of the photoconductivity were performed by DC electrical tool under visible and UV illuminations. Obtained results reported in this study on the performances of the fabricated GZO based device reveal that the photoresponse, rapidity, photosensivity, responsivity, detectivity, and reproducibility of the device are very interesting in photodetection, especially in UV wavelength domain. We notice that the device has a good responsivity as compared to detectors fabricated using other techniques, with a rather good repeatability. Furthermore, the electronic conductivity mechanism is modeled as an ohmic one.

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\begin{equation}S\ = \frac{{{{I}_{{\mathrm{ph}}}}}}{{{{I}_{{\mathrm{dark}}}}}}\ \end{equation}

\begin{equation}{{R}_{{\mathrm{esp}}}} = \frac{{{{I}_{{\mathrm{ph}}}}}}{{A\ P}}\ \end{equation}

\begin{equation}D = \frac{{{{R}_{{\mathrm{esp}}}}\sqrt A }}{{\sqrt {2{\mathrm{e}}{{{\mathrm{I}}}_{{\mathrm{dark}}}}} }}\ \end{equation}

…”

Section: Resultsmentioning

confidence: 99%

“…The rise time is defined as the time required for the photodetector to reach 90% of the photocurrent, and the decay time as that one needed to reach 10% of the initial current baseline after switching off the light. In Equations 7-9, we give expressions used to calculate the photosensitivity (S), the photoresponsivity (R esp ), and the detectivity (D) of the GZO-based device 36,37 :…”

Section: Photodetection Propertiesmentioning

confidence: 99%

Interesting UV and visible photodetection properties of GZO‐based device

Rejeb,

Souissi,

Alaya

et al. 2024

Int J Applied Ceramic Tech

View full text Add to dashboard Cite

show abstract

“…The formula (Eq. 11) can be used to determine the absorption coefficient (𝛼) from the transmittance of the films [46],…”

Section: Uv Vis Spectroscopy Analysismentioning

confidence: 99%

The Synthesis and the effect of Cu on optoelectronic qualities of β-In2S3 as a window layer for CIGS thin film solar cells

Alamoudi¹,

Timoumi

2022

Preprint

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In this paper, the vacuum thermal evaporation technique was used to investigate β-In2S3 doped with copper (Cu) as window layer thin film for solar cells. For various Cu doping levels, the characteristics of the thin films were studied utilizing structural, morphological, and optical characterization techniques, as well as dielectric testing. The research included X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, and energy-dispersive X-ray spectroscopy (EDS), Infrared analysis (FTIR), XPS, Ellipsometry and UV-NIR spectroscopy. The measurements demonstrated that the real and imaginary isolation constants were over the wavelength range and successfully estimated the Urbach energy (Eu) and band gap energy. Moreover, employing the Wemple-Didomenico model helped uncover the Cauchy coefficients’ refractive index and the dispersion and oscillation energies. Therefore, the results presented in this paper show that the use of Cu-In2S3 for perovskite cells offers a high-efficiency alternative in the solar energy field.

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