S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides

Mazzucato, Simone; Potter, Richard J.; Erol, Ayşe; Balkan, N.; Chalker, Paul R.; Joyce, Tim; Bullough, T.J.; Marie, X.; Carrère, Hélène; Bedel, E.; Lacoste, Guy; Arnoult, Alexandre; Fontaine, C.

doi:10.1016/s1386-9477(02)00783-x

Cited by 39 publications

(22 citation statements)

References 6 publications

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“…This material and other dilute nitrides are also very interesting because of its unusual optical properties including the effect of carrier localization at low temperatures [3][4][5][6][7][8]. This effect is usually investigated by macro photoluminescence (PL) where the exciton/carrier localization is manifested by the so called "Sshape" behaviour of PL peak with the temperature increase [3]. In general, it is expected that the broad PL band, which is attributed to the recombination of localized excitons/carriers, should be composed of sharp PL lines related to individual excitons.…”

mentioning

confidence: 99%

Micro‐photoluminescence of GaInNAs layers grown on GaAs substrates of various crystallographic orientations

Latkowska

Kudrawiec

Sęk

et al. 2011

Phys. Status Solidi C

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Low temperature micro‐photoluminescence (μ‐PL) has been applied to study GaInNAs bulklike layers grown on GaAs substrates with various crystallographic orientations [(100), (111)A, (311)A, (411)A, and (511)A]. At low excitation conditions, the μ‐PL spectra show sharp PL lines of ∼100‐300 μeV widths. The density of these lines changes from sample to sample as well as from place to place within one sample. When the excitation power is increased, an additional smooth PL band appears at the higher‐energy side. This band is located ∼30‐100 meV above the band of sharp PL lines and is attributed to free exciton/carrier recombination. The sharp PL lines are attributed to the recombination of localized excitons trapped at local potential minima. These lines are not resolved in macro‐PL spectra because of their high density. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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mentioning

confidence: 99%

Micro‐photoluminescence of GaInNAs layers grown on GaAs substrates of various crystallographic orientations

Latkowska

Kudrawiec

Sęk

et al. 2011

Phys. Status Solidi C

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“…The main PL peak energies firstly red shifts then blue shifts and finally red shifts with temperatures. This might be considered as so-called "S-shape behaviour", which is typical of system having localized states [8]. As seen in the figure, P L red shifts more rapidly than P H with rise in temperatures.…”

Section: Resultsmentioning

confidence: 82%

MOVPE growth of high optical quality InGaPN layers on GaAs (001) substrates

Kaewket

Sanorpim

Tungasmita

et al. 2010

Phys. Status Solidi (c)

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Highly luminescent In0.528Ga0.472P1‐yNy layers (y =0–0.027) were grown on GaAs (001) substrates by metalorganic vapor phase epitaxy. The dependence of photoluminescence (PL) properties on the N content in In0.528Ga0.472P1‐yNy layers was investigated. Near‐band edge emissions were obviously observed up to room temperature. With increasing temperature, the PL peak energy exhibits an inverted S‐shape, which explained by the strong localization of carriers at low‐temperatures, while the band‐to‐band transition becomes dominant at higher temperatures. With incorporation of N into In0.528Ga0.472P, the bandgap at 10 K is red‐shifted as large as 110 meV for the highest N‐containing layer (y =0.027), indicating a large bandgap bowing. Further, the temperature dependence of the bandgap energy becomes significantly weak with increasing N content. Our results suggest that the density of states around the band edge of In0.528Ga0.472P1‐yNy is modified from that of In0.528Ga0.472P due to the localized states possibly induced by the presence of N. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In some cases, PL spectra measured as T is increased from ∼10 to 300 K display two peaks, one of which diminishes with increasing T (characteristic of LE emission) and the other of which increases with T (characteristic of free exciton (FE) emission) Buyanova et al (2002); Mair et al (2000); Shirakata et al (2002). In addition, the S-shaped temperature dependence of the peak emission wavelength for GaNAs samples also suggest that localised excitons dominate recombination at low T in dilute nitrides Hierro et al (2003); Mazzucato et al (2003); Pomarico et al (2002). To date, the reasons offered for localisation at low T relate to compositional fluctuations within the lattice Buyanova et al (2003) (2002); Pan et al (2000).…”

Section: Barriersmentioning

confidence: 94%

SPSLs and Dilute-Nitride Optoelectronic Devices

Jalili¹

2011

Optoelectronics - Devices and Applications

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S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides

Cited by 39 publications

References 6 publications

Micro‐photoluminescence of GaInNAs layers grown on GaAs substrates of various crystallographic orientations

Micro‐photoluminescence of GaInNAs layers grown on GaAs substrates of various crystallographic orientations

MOVPE growth of high optical quality InGaPN layers on GaAs (001) substrates

SPSLs and Dilute-Nitride Optoelectronic Devices

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