Salt-assisted clean transfer of continuous monolayer MoS 2 film for hydrogen evolution reaction

Cho, Heung-Yeol; Nguyen, Tri Khoa; Ullah, Farman; Yun, Jong-Won; Nguyen, Cao Khang; Kim, Yong Soo

doi:10.1016/j.physb.2017.10.026

Cited by 16 publications

(14 citation statements)

References 30 publications

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“…We observed a slight change in FWHM of E 1 2g (0.07 cm –1 for SiO 2 → SiO 2 ; 0.13 cm –1 for SiO 2 /Si → mica; 0.04 cm –1 for SiO 2 /Si sapphire) and A 1g (0.08 cm –1 for SiO 2 → SiO 2 ; 0.06 cm –1 for SiO 2 /Si → mica; 0.09 cm –1 for SiO 2 /Si → sapphire) after the transfer. In the conventional transfer method, the change in FWHM of E 1 2g and A 1g modes was around 1.7 and 1.41 cm –1 , respectively, which is significantly larger than our process. This comparatively less change in FWHM of Raman modes clearly confirms that the crystalline quality of MoS 2 flakes is not affected by this transfer process and better than the conventional method, which degrades the film quality.…”

Section: Resultscontrasting

confidence: 62%

“…Therefore, the transfer of atomically thin 2D materials is not affected by these constraints; thus, it can be more flexible for device fabrication. So far, considerable efforts have been invested to transfer 2D TMDCs from growth substrate onto arbitrary substrate. − Early investigations used hazardous chemical etchants to transfer 2D flakes onto the arbitrary substrate. As an example, the transfer of 2D flakes from sapphire to other substrates involves highly concentrated hydrofluoric acid (HF), which is environmentally unfriendly and causes serious damage to the 2D material .…”

Section: Introductionmentioning

confidence: 99%

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Monolayer MoS₂ Transferred on Arbitrary Substrates for Potential Use in Flexible Electronics

Sharma

Singh

2020

ACS Appl. Nano Mater.

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Molybdenum disulfide (MoS2), having unique optical and electrical properties, is a promising material for both nanoscale and flexible electronics. Direct growth of MoS2 over various substrates is possible by using several synthesis routes. But there is a pressing need for clean and damage-free transfer of MoS2 from the growth substrate onto other substrates for structural characterizations and novel device fabrication. In this work, we report about an efficient and clean route that can be applied for the transfer of MoS2 over any other substrate. The proposed transfer route is based on the dissolution of the water-soluble layer (Na2S/Na2SO4) formed underneath MoS2 flakes simultaneously during the growth process. The results from optical, morphological, and transmission electron microscopy characterizations show that the transfer process is clean and damage-free. Also, there is no significant change in morphology and quality of the transferred MoS2 layers. We have shown that the crystalline quality of MoS2 transferred by this approach is much better than the conventional transfer method. Furthermore, the proposed process allows the reuse of the growth substrate, which makes it an inexpensive process. This process may also be used for the transfer of other 2D materials (e.g., TMDCs) on any other substrate of choice. Also, this transfer approach paves the way for heterointegration of MoS2 with other materials and provides the opportunities to fabricate the flexible electronic and optoelectronic devices based on MoS2.

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Section: Resultscontrasting

confidence: 62%

Section: Introductionmentioning

confidence: 99%

Monolayer MoS₂ Transferred on Arbitrary Substrates for Potential Use in Flexible Electronics

Sharma

Singh

2020

ACS Appl. Nano Mater.

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“…[ 13–16 ] Since a typical CVD process for preparing monolayer MoS 2 requires a high synthetic temperature of >700 °C, the state‐of‐the‐art solution is to introduce an additional transfer process in which the as‐grown monolayer MoS 2 is mechanically and/or chemically detached from the original growth substrate and placed on the target substrate. [ 17–20 ] However, the transfer process often induces mechanical damages on MoS 2 such as wrinkles, voids, and cracks or impurity residues (e.g., poly(methyl methacrylate) (PMMA), potassium hydroxide (KOH)) that degrade the quality of the material. [ 21 ]…”

Section: Introductionmentioning

confidence: 99%

Synthesis of High‐Performance Monolayer Molybdenum Disulfide at Low Temperature

Park

Shen

et al. 2021

Small Methods

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The large‐area synthesis of high‐quality MoS2 plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)‐grown MoS2 require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high‐quality monolayer MoS2 with the domain size up to 120 µm by metal‐organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low‐substrate temperature, the MOCVD‐grown MoS2 exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm2 V−1 s−1 at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS2 growth process via a geometric model of the MoS2 flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.

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“… 15 Significant efforts have been made to transfer 2D material films without degrading the film quality, which is critical for the success of 2D materials. 23 − 28 In early studies, hazardous chemical etchants such as hydrofluoric acid (HF), hydrochloric acid (HCl), and nitric acid (HNO 3 ) were used to transfer 2D materials, which are environmentally unfriendly and degrade the film quality. 24 , 29 Strong bases such as KOH and NaOH have also been used to transfer the 2D material film, which are more attractive than hazardous chemical etchants.…”

Section: Introductionmentioning

confidence: 99%

Large-Area Transfer of 2D TMDCs Assisted by a Water-Soluble Layer for Potential Device Applications

et al. 2022

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Layer transfer offers enormous potential for the industrial implementation of two-dimensional (2D) material technology platforms. However, the transfer method used must retain the as-grown uniformity and cleanliness in the transferred films for the fabrication of 2D material-based devices. Additionally, the method used must be capable of large-area transfer to maintain wafer-scale fabrication standards. Here, a facile route to transfer centimeter-scale synthesized 2D transition metal dichalcogenides (TMDCs) (3L MoS 2 , 1L WS 2 ) onto various substrates such as sapphire, SiO 2 /Si, and flexible substrates (mica, polyimide) has been developed using a water-soluble layer (Na 2 S/Na 2 SO 4 ) underneath the as-grown film. The developed transfer process represents a fast, clean, generic, and scalable technique to transfer 2D atomic layers. The key strategy used in this process includes the dissolution of the Na 2 S/Na 2 SO 4 layer due to the penetration of NaOH solution between the growth substrate and hydrophobic 2D TMDC film. As a proof-of-concept device, a broadband photodetector has been fabricated onto the transferred 3L MoS 2 , which shows photoresponse behavior for a wide range of wavelengths ranging from near-infrared (NIR) to UV. The enhancement in photocurrent was found to be 100 times and 10 times the dark current in the UV and visible regions, respectively. The fabricated photodetector shows a higher responsivity of 8.6 mA/W even at a low applied voltage (1.5 V) and low power density (0.6 μW/mm 2 ). The detector enables a high detectivity of 2.9 × 10 11 Jones. This work opens up the pathway toward flexible electronics and optoelectronics.

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Salt-assisted clean transfer of continuous monolayer MoS 2 film for hydrogen evolution reaction

Cited by 16 publications

References 30 publications

Monolayer MoS₂ Transferred on Arbitrary Substrates for Potential Use in Flexible Electronics

Monolayer MoS₂ Transferred on Arbitrary Substrates for Potential Use in Flexible Electronics

Synthesis of High‐Performance Monolayer Molybdenum Disulfide at Low Temperature

Large-Area Transfer of 2D TMDCs Assisted by a Water-Soluble Layer for Potential Device Applications

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Salt-assisted clean transfer of continuous monolayer MoS 2 film for hydrogen evolution reaction

Cited by 16 publications

References 30 publications

Monolayer MoS2 Transferred on Arbitrary Substrates for Potential Use in Flexible Electronics

Monolayer MoS2 Transferred on Arbitrary Substrates for Potential Use in Flexible Electronics

Synthesis of High‐Performance Monolayer Molybdenum Disulfide at Low Temperature

Large-Area Transfer of 2D TMDCs Assisted by a Water-Soluble Layer for Potential Device Applications

Contact Info

Product

Resources

About

Monolayer MoS₂ Transferred on Arbitrary Substrates for Potential Use in Flexible Electronics

Monolayer MoS₂ Transferred on Arbitrary Substrates for Potential Use in Flexible Electronics