“…[17,18] RIN in semiconductor lasers has been extensively studied theoretically and experimentally in different types of single section devices, such as Fabry-Perot (FP) lasers, [19,20] distributed feedback (DFB) lasers, [18,21] DFB tapered lasers, [22] DBR lasers, [23] vertical cavity surface emitting lasers (VCSEL) [24] and semiconductor optical amplifiers (SOA) with straight [25] or tapered geometries. [26] The RIN properties of two-section lasers with straight sections [27] and tapered section [10] have been studied, as well as those of masteroscillator power-amplifiers (MOPA) in integrated [13,28,29] or hybrid [30] configurations. Finally, multi-section lasers have also been studied [31,32] due to their gain-lever properties.…”