Sampling frequency influence on magnetic characteristic evaluation under high frequency GaN inverter excitation

Martínez, Wilmar; Odawara, Shunya; Fujisaki, Keisuke

doi:10.1109/ifeec.2017.7992169

Cited by 8 publications

(4 citation statements)

References 20 publications

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“…Commercially available GaN transistors are developed by various manufacturers, namely Efficient Power Conversion (EPC), Panasonic, and Transphorm. While prior studies [1][2][3][4][5] evinced that a high-frequency H-bridge GaN inverter with compact size, lower-price, and high-performance is rarely found in the market, this project was designed to fulfill the indicated demand. Previously, scientists have designed GaN inverters using the dual-frequency programmed harmonic modulation method at ~26-991.6 kHz with totem-pole rectifiers operating in a discontinuous conduction mode at 6.78 MHz [6,7].…”

Section: Motivationmentioning

confidence: 99%

Gallium Nitride Inverter Design with Compatible Snubber Circuits for Implementing Wireless Charging of Electric Vehicle Batteries

et al. 2020

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High-frequency wireless power transfer (WPT) technology provides superior compatibility in the alignment with various WPT standards. However, high-efficiency and compact single-phase power switching systems with ideal snubber circuits are required for maximum power transfer capability. This research aims to develop an inverter using Gallium Nitride (GaN) power transistors, optimized RCD (resistor/capacitor/diode) snubber circuits, and gate drivers, each benefitting WPT technology by reducing the switching and conduction loss in charging electric vehicle batteries. A full-bridge GaN inverter was simulated and instituted as part of the wireless charging circuit design. The RCD circuits were adjusted by transferring maximum power from the power supply to the transmitter inductor. For verification of the simulated output, lab-scale experiments were implemented for two half-bridges controlled by gate drivers with corresponding snubber circuits. After authenticating the output results, the GaN inverter was tested with an input range of 30 V to deduce the success of charging electric vehicle batteries within an efficient time frame. The developed inverter, at 80 kHz frequency, was applied in place of a ready-to-use evaluation board, fully reducing less harmonic distortion and greatly increasing WPT system efficiency (~93%). In turn, the designed GaN inverter boasts considerable energy savings, resulting in a more cost-effective solution for manufacturers.

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Section: Motivationmentioning

confidence: 99%

Gallium Nitride Inverter Design with Compatible Snubber Circuits for Implementing Wireless Charging of Electric Vehicle Batteries

et al. 2020

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“…The core loss density per mass unit can be obtained from different ways. In [16]- [18] the measured dynamic loop B0(Hs) during one period of the fundamental frequency f is obtained as:…”

Section: Iron Loss Modelmentioning

confidence: 99%

“…Nevertheless, the measured dynamic loop B0(Hs) of (3) and presented in [16]- [18] tends to suffer from numerical inaccuracies if the integration in (2) and differentiation in (3) are not consistent with each other. For instance, the results presented in [16]- [18] show a considerable variation of the calculated core losses using (3).…”

Section: Iron Loss Modelmentioning

confidence: 99%

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Current Measurement Issues of a High Frequency GaN Inverter in the MHz Order for Magnetic Characterization

Martínez

Suarez

2019

2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Nowadays, there is a great interest in the industry for outstanding magnetic materials with low-loss properties. Moreover, with the introduction of novel Wide Bandgap devices, higher frequency operation has been demanded from these novel magnetic materials. Thereby, magnetic characterization for obtaining the iron loss behavior is essential. However, when a magnetic material is experimentally characterized, it is important to select a suitable measurement device, especially when a semiconductor inverter is powering the magnetic material and it is driven at a high switching frequency. Usually measurement devices have a good response in magnitude, but there is not a clear understanding about how their phase response at high frequencies measurements affects the characterization. Consequently, if the phase characteristics of a measurement device is not well-know, it is likely that the iron loss characterization will not be accurate. This paper studies the measurement issues when an iron loss characterization procedure is conducted. This study is carried out with the comparison of using clamp type current probes and high precision shunt resistors at high switching frequency excitations with a GANFET inverter. In addition, an experimental evaluation of iron losses at several switching frequencies is presented. As a result, the phase characteristics of several sensors was obtained, and it was possible to identify the inaccuracies that they can generate at a high frequency measurement.

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A Graphical Approach to Fast Identification of the Voltage and Current Requirements to Measure Core Loss at Target Measurement Conditions with Application to High-Frequency Power Amplifier Utilization

Todorova

2021

2021 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Sampling frequency influence on magnetic characteristic evaluation under high frequency GaN inverter excitation

Cited by 8 publications

References 20 publications

Gallium Nitride Inverter Design with Compatible Snubber Circuits for Implementing Wireless Charging of Electric Vehicle Batteries

Gallium Nitride Inverter Design with Compatible Snubber Circuits for Implementing Wireless Charging of Electric Vehicle Batteries

Current Measurement Issues of a High Frequency GaN Inverter in the MHz Order for Magnetic Characterization

A Graphical Approach to Fast Identification of the Voltage and Current Requirements to Measure Core Loss at Target Measurement Conditions with Application to High-Frequency Power Amplifier Utilization

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