Sapphire surface pits as sources of threading dislocations in hetero-epitaxial GaN layers

Dislocation reactions in hetero‐epitaxial (0001) GaN layers

“…It was proved that a dislocations can generate due to dissociation of Shockley partials bounding stacking faults in the nucleation layers [3,22]. And it is likely c dislocations can generate due to nanosized pits in sapphire surfaces [23]. In principle, dislocations can also generate as results of condensation of point defects in the nucleation layers [3].…”