Satistical Analysis of SiO₂Contact Hole Etching in a Magnetically Enhanced Reactive Ion Etching Reactor

Abstract

Plasma etching of SiO 2 contact holes was statistically analyzed by a fractional factorial experimental design. The analysis revealed the dependence of the etch rate and DC self-bias voltage on the input factors of the magnetically enhanced reactive ion etching reactor, including gas pressure, magnetic field, and the gas flow rates of CHF 3 , CF 4 , and Ar. Empirical models of the DC self-bias voltage and etch rate were obtained. The DC self-bias voltage was found to be determined mainly by the operating pressure and the magnetic field, and the etch rate was related mainly to the pressure and the flow rates of Ar and CHF 3 .