Saturated vapor pressure over AgGaGeS4 crystals

Synthesis and growth of nonlinear infrared crystal material AgGeGaS4 via a new reaction route

“…Many crystals such as AgGaSiSe 4 , CuGaSnSe 4 , AgGeGaS 4 , and AgAlGeSe 4 have been studied [2][3][4]. Due to various reasons, some of them could not grow into single crystals, but the others, especially, AgGeGaS 4 (AGGS) crystal has been paid much attention because of its unique structure, special properties, including the capability of using as nonlinear optical element in second harmonic generation (SHG), difference frequency generation (DFG) and optical parametric amplification (OPA) [5][6][7][8].…”

Single crystal preparation and properties of the AgGaGeS4–AgGaGe3Se8 solid solution

“…As to end compositions, melting temperature determined for AgGaGeS 4 is T¼112975 K that well relates to earlier result T¼1133 K [11] and is noticeably higher the values T¼1118, 1113, and 1121 K reported in Refs. [10,14,18], respectively. The melting temperature of AgGaGe 3 Se 8 is T¼ 99675 K that confirms earlier value T¼ 1001, 993 K [10], and T¼993 K [13].…”

“…The quaternary g-phase that forms in the AgGaSe 2 -GeSe 2 system exists in the range of 65-88 mol% GeSe 2 at T ¼720 K with the melting point maximum at T¼995 K, which corresponds to the composition AgGaGe 3 Se 8 (space group Fdd2; a ¼1.2431, b¼2.3806, c ¼0.7135 nm) [13]. The crystals of AgGaGeS 4 and of the g-phase selenide were obtained by many authors and their properties were extensively reported [10][11][12][13][14][15][16][17][18][19][20][21][22]. As AgGaGeS 4 and AgGaGe 3 Se 8 are isostructural with minor differences in the ionic radii of the interchangeable elements (for a case of isovalent substitution), one can expect the formation of considerable solid solution ranges between these two compounds.…”

Control of Melt Decomposition for the Growth of High Quality AgGaGeS4 Single Crystals for Mid-IR Laser Applications

“…Indeed, a composition below 48% GeS 2 mol% and above 55% GeS 2 mol% lead to the formation of the mixed AgGaGeS 4 + AgGaS 2 and AgGaGeS 4 + GeS 2 phases respectively. Otherwise, AGGS de-Plot of simulated GeS 2 vapor pressure variation (red line) versus temperature and comparison with experimental data from ref 13.…”

“…thermodynamic calculations were performed relatively to the second part of the previous equation. The results of the simulations are reported onFigure 5and are compared to experimental data extrapolated from Vasil'eva et al13 They are in good agreement with experimental results and indicated that GeS 2 vapor pressure increases quickly above 700• C. Thus, vapor pressure of GeS 2 is about 0.7 bar around the 845 • C, at the melting point temperature of AgGaGeS 4 reported by Badikov et al4 and about 5 bar at 1000 • C which is the highest chemical synthesis temperature in our process. This vaporization can induce a deviation from the initial composition depending on the synthesis conditions, the amount of starting elements and the reactor volume.…”