Saturation and scaling of epitaxial island densities

Rätsch, Christian; Zangwill, Andrew; Šmilauer, P.; Vvedensky, Dimitri D.

doi:10.1103/physrevlett.72.3194

Cited by 313 publications

(173 citation statements)

References 23 publications

Supporting

Mentioning

162

Contrasting

Order By: Relevance

“…Another central quantity in submonolayer growth is the scaling function g x s sp s; , with x s=s s, which is independent of the coverage and of the parameters R D 0 = and F 0 =D 0 [14,15]. This scaling holds also for more general situations of reversible growth [16] and growth with moving islands [5,7].…”

mentioning

confidence: 94%

Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition

Koponen

Jahma²,

Rusanen³

et al. 2004

Phys. Rev. Lett.

View full text Add to dashboard Cite

We present a rate equation model for submonolayer island growth under conditions where hyperthermal deposition techniques such as low-energy ion deposition are employed to achieve smooth layerby-layer growth. By asymptotic analysis, we demonstrate that the model exhibits stationary behavior with well-defined dynamic and growth exponents and , respectively, in the limit of small and high detachment rates. We verify these predictions by using the particle coalescence simulation method. The simulations reveal the existence of a relatively sharp transition regime with an increasing detachment rate of adatoms from high values of the growth exponent 1 to much smaller values of determined by detachment and island diffusion processes. Our numerical results for the island size distribution indicate an anomalously high number of small islands, in agreement with available experimental data.

show abstract

mentioning

confidence: 94%

Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition

Koponen

Jahma²,

Rusanen³

et al. 2004

Phys. Rev. Lett.

View full text Add to dashboard Cite

show abstract

“…These are called limitedmobility models because the diffusion of a deposited atom, whenever possible, takes place in a restricted time interval before the deposition of another atom. More complex models involve the competition among deposition, diffusion and aggregation [14,15,16], being able to represent real systems' features quantitatively.…”

Section: A Interface Growthmentioning

confidence: 99%

Depinning transitions in interface growth models

Reis

2003

Braz. J. Phys.

View full text Add to dashboard Cite

Pinning-depinning transitions are roughening transitions separating a growing phase and pinned (or blocked) one, and are frequently connected to transitions into absorbing states. In this review, we discuss lattice growth models exhibiting this type of dynamic transition. Driven growth in media with impurities, the competition between deposition and desorption and deposition of poisoning species are some of the physical mechanisms responsible for the transitions, leading to different types of stochastic growth rules. The growth models are classified according to the those mechanisms and possible applications are shown, which include suggestions of experimental realizations of directed percolation transitions. I IntroductionThe study of surface and interface growth processes attracts much interest from the technological point of view mainly because it helps to understand the growth mechanisms of nanostructures and, consequently, their physical properties [1]. From the theoretical point of view, they motivated significant advances in non-equilibrium Statistical Mechanics and related fields [2,3]. Theoretical modeling is usually based on stochastic differential equations or on discrete atomistic models. In various models, changing one parameter leads to a roughening transition between a rough and a smooth phase. Two well known examples are the transition in the Kardar-Parisi-Zhang equation in dimensions d ≥ 3, separating regimes with linear (smooth) and nonlinear growth, and temperature-induced roughening transitions in equilibrium conditions [2]. On the other hand, in the so-called depinning transitions, the interface propagates only in the rough phase, being pinned in the smooth phase. Several mechanisms may be responsible for this type of transition, such as the presence of impurities in the growth media, competition between deposition and evaporation or formation of poisoning species at the growing surface. One of the interesting features of depinning transitions is that they frequently can be mapped onto transitions into absorbing states, whose most prominent example is directed percolation (DP). Different connections of depinning transitions to DP are found in discrete and continuous growth models, as well as connections with other classes of transitions to absorbing states [4] and, eventually, with statistical equilibrium transitions. Besides the fundamental interest of these systems, the large variety of interface growth phenomena observed in nature suggests them as strong candidates to experimental realizations of models of dynamic transitions, such as DP (see e. g. Ref.[5]).The aim of the present work is to review the basic features of lattice growth models exhibiting depinning transitions. Before introducing these systems, we will briefly summarize the theory and phenomenology concerning interface growth and phase transitions into absorbing states (Sec. II). Then we will discuss the problem of growing interfaces in disordered media with quenched disorder, in which transitions in the DP class or in the cl...

show abstract

“…we could obtain different values for different sets of diffusion coefficients. This has been shown to be the case in more general reversible growth models [29] and growth with mobile islands [20,30], where the scaling exponents explicitly depend on the details of the model.…”

Section: Scalingmentioning

confidence: 99%

Diffusion and submonolayer island growth during hyperthermal deposition on Cu(100) and Cu(111)

et al. 2005

View full text Add to dashboard Cite

We consider the influence of realistic island diffusion rates to homoepitaxial growth on metallic surfaces using a recently developed rate equation model which describes growth in the submonolayer regime with hyperthermal deposition. To this end, we incorporate realistic size and temperature-dependent island diffusion coefficients for the case of homoepitaxial growth on Cu(100) and Cu(111) surfaces. We demonstrate that the generic features of growth remain unaffected by the details of island diffusion, thus validating the generic scenario of high density of small islands found experimentally and theoretically for large detachment rates. However, the details of the morphological transition and scaling of the mean island size are Preprint submitted to Surface Science 7 March 2018 strongly influenced by the size dependence of island diffusion. This is reflected in the scaling exponent of the mean island size, which depends on both temperature and the surface geometry.

show abstract

Saturation and scaling of epitaxial island densities

Cited by 313 publications

References 23 publications

Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition

Submonolayer Growth with Anomalously High Island Density in Hyperthermal Deposition

Depinning transitions in interface growth models

Diffusion and submonolayer island growth during hyperthermal deposition on Cu(100) and Cu(111)

Contact Info

Product

Resources

About