Saturation effects observed in high fluence heavy ion implantation at few tens of keV

Sahu, Gayatri; Rath, Sakti Kanta; Joseph, Boby; Roy, G.; Mahapatra, D. P.

doi:10.1016/j.vacuum.2008.08.005

Cited by 11 publications

(4 citation statements)

References 12 publications

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“…Moreover, the integrated peak intensity, which corresponds to the amount of tungsten, did not increase and seemed to be saturated with respect to the fluence. Similar results were previously seen for heavy-ion implantation in silica and alumina and were attributed to ion-beam sputtering effects [12,13].…”

Section: Results and Discussion 31 Rbssupporting

confidence: 87%

Nanoparticle Formation by Tungsten Ion Implantation in Glassy Carbon

Kato

Yamaki

Yamamoto

et al. 2013

Trans. Mat. Res. Soc. Japan

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Nanoparticles were formed by 100-keV tungsten-ion implantation in unpolished glassy carbon substrates at different fluences. The implanted samples were analyzed by Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy, hydrodynamic voltammetry using a rotating disk electrode, and field emission scanning electron microscopy. A significant sputtering effect changed the depth profile during the course of irradiation and limited the amount of tungsten that could be retained on the substrate, which saturated at a fluence of around 6 × 10 16 ions/cm 2 . The observed depth-profile change and saturation can be explained quantitatively by the calculated sputtering yield. The nanoparticles of tungsten carbides with diameters of around 16 nm were dispersed uniformly on the surface.

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Section: Results and Discussion 31 Rbssupporting

confidence: 87%

Nanoparticle Formation by Tungsten Ion Implantation in Glassy Carbon

Kato

Yamaki

Yamamoto

et al. 2013

Trans. Mat. Res. Soc. Japan

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“…Thus, with the increasing ion fluence, sputtering effect has to be taken care of. After threshold fluence, there is a balance between sputtered ion and ion fluence [3]. Due to its implication in industrial applications, the damage due to implantation has Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.…”

Section: Introductionmentioning

confidence: 99%

Confinement in MeV Au ²⁺ implanted Si: a Raman scattering study

Sahu¹

2013

Adv. Nat. Sci: Nanosci. Nanotechnol.

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Structural modifications in silicon matrix due to heavy ion (Au2+) implantation are studied using mainly Raman spectroscopy and x-ray diffraction (XRD) method. Raman spectra show a red-shift in their peak position along with line-width broadening with respect to increase in implantation fluence. This is explained taking both phonon confinement and stress into account. Heavy ion implantation introduces tensile stress in the silicon matrix. The amount of stress produced as a function of fluence has been calculated. A proposed model explaining the Raman shift and peak broadening is discussed in detail. XRD results also go in-line with the above analysis.

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“…During implantation, samples were tilted 7 o from the axis of ion beam for reducing any channeling effect. The fluence of keV Au implantation was chosen by the fact that above a fluence of 3 × 10 16 cm −2 there is no change in the optical properties due to sputtering effects [10]. The doubly Au implanted samples were annealed at five different temperatures varying between 500 o -950 o C for 1 hr in air.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of silicon nanocrystals using sequential Au ion implantation

Sahu,

Kumar,

Mahapatra

2013

Preprint

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Silicon nanocrystals are produced using a two-stage gold ion implantation technique. First stage implantation using low energy ions leads to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the second stage is found to produce strained Si NCs. An annealing at a temperature as low as 500 o C is seen to result in strain free NCs showing quantum confinement effects. Higher temperature annealing of the samples is found to result in growth in size from recrystallization of the a-Si matrix. Raman Scattering, X-ray diffraction (XRD) and Rutherford Backscattering spectrometry (RBS) have been used to study the effect of annealing on the samples and the size of Si NCs formed. The data could be well explained using a phonon confinement model with an extremely narrow size distribution. XRD results go in line with Raman analysis.

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Saturation effects observed in high fluence heavy ion implantation at few tens of keV

Cited by 11 publications

References 12 publications

Nanoparticle Formation by Tungsten Ion Implantation in Glassy Carbon

Nanoparticle Formation by Tungsten Ion Implantation in Glassy Carbon

Confinement in MeV Au ²⁺ implanted Si: a Raman scattering study

Fabrication of silicon nanocrystals using sequential Au ion implantation

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Saturation effects observed in high fluence heavy ion implantation at few tens of keV

Cited by 11 publications

References 12 publications

Nanoparticle Formation by Tungsten Ion Implantation in Glassy Carbon

Nanoparticle Formation by Tungsten Ion Implantation in Glassy Carbon

Confinement in MeV Au 2+ implanted Si: a Raman scattering study

Fabrication of silicon nanocrystals using sequential Au ion implantation

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Product

Resources

About

Confinement in MeV Au ²⁺ implanted Si: a Raman scattering study