Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation

Vinokurov, D. A.; Kapitonov, V. A.; Lyutetskii, A. V.; Pikhtin, N. A.; Slipchenko, S. O.; Sokolova, Z. N.; Stankevich, A. L.; Khomylev, M. A.; Shamakhov, V. V.; Borshchev, K. S.; Арсентьев, И. Н.; Tarasov, I. S.

doi:10.1134/s1063782607080234

Cited by 16 publications

(16 citation statements)

References 8 publications

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“…As we showed recently [1,3], the charge-carrier concentration increases in the active region of the laser structure and in the waveguide layers at high levels of current pumping; this increase is a result of saturation of the rate of stimulated recombination. In lasers based …”

Section: A Study Of Asymmetricmentioning

confidence: 64%

“…In the long-wavelength laser structures ( λ = 1.88 µ m), the experimental value of internal optical losses was reduced to 1 cm -1 (Fig. 2), which is comparable to the value of internal optical losses at the oscillations' threshold for lasers with the wavelength of 1.04 µ m. In the continuous-wave [9,10] and pulsed [2] modes of oscillations at high excitation levels, the optical-radiation power of the lasers with the wavelength of 1.75-1.88 µ m is several times lower than that of the shortwavelength ( λ = 1.04 µ m) lasers [1,[3][4][5][6][7][8]. In Fig.…”

Section: A Study Of Asymmetricmentioning

confidence: 72%

“…Our recent studies [1,[3][4][5] showed that the chargecarrier concentration increases in the active region of a semiconductor laser beyond the lasing threshold at a high level of current pumping. The increase in concentration sets in when the rate of stimulated recombination becomes equal to the rate of energy relaxation of electrons in a quantum well of the active region.…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, irrespective of the emission wavelength and the used system of alloys, a retardation of the growth (saturation) of emitted optical power is observed for semiconductor lasers. This process is especially pronounced in long-wavelength lasers in which the highest attainable emission power is severalfold lower than in the lasers of the near-infrared (near-IR) region of emission [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

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10.1007/s11453-008-1015-z

2010

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Spectral and light-current characteristics of lasers based on the asymmetric separate-confinement heterostructures InGaAs/InGaAsAl/InP and InGaAs/GaAs/AlGaAs/GaAs were studied in the pulsed mode of lasing. It is shown that, at high levels of current pumping, the charge-carrier concentration in the active region of semiconductor lasers for the near-infrared optical region increases beyond the oscillation threshold; drastic saturation of the light-current characteristics is observed. Processes occurring in lasers as the charge-carrier concentration increases beyond the lasing threshold are studied theoretically. It is established that, at high pump levels, the rate of stimulated recombination decreases, the lifetime of charge carriers increases, and both the concentration of emitted photons and the quantum yield of stimulated radiation decrease. It is shown that variations in stimulated recombination, the decrease in the quantum efficiency, and saturation of the light-current characteristic in semiconductor lasers at high levels of current pumping are caused by the contribution of the nonradiative Auger recombination.

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Section: A Study Of Asymmetricmentioning

confidence: 64%

Section: A Study Of Asymmetricmentioning

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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10.1007/s11453-008-1015-z

2010

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“…Continuous-wave semiconductor lasers operating in this wavelength region have already demonstrated close-to-limiting radiation characteristics [2 - 4]. However, in the case of pumping by high-current pulses with durations of several hundreds of nanoseconds, the light - current characteristics of theses lasers saturate independently of the growth technology and the composition of the used semiconductor solid solutions [2,3,5]. The reasons for the saturation of pulsed power at high pump currents were studied in a number of works, which considered the factors responsible for this saturation.…”

Section: Introductionmentioning

confidence: 99%

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

Veselov¹,

Kapitonov²,

Pikhtin³

et al. 2014

Quantum Electron.

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Semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide and emitting in the wavelength range 1.0 -1.1 mm are studied. It is found that the intensity of spontaneous emission from the active region increases with increasing pump current above the lasing threshold and that this is caused by a growth in the concentration of charge carriers in the active region due to the modal gain enhancement needed to compensate for the growing internal optical loss at high pulsed pump currents. It is shown that the increase in the internal optical loss with increasing pulsed pump current is one of the main reasons for saturation of the light -current characteristics of high-power semiconductor lasers.

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11.1 Quantum dot diode lasers

Zhukov¹

2011

Laser Systems

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Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation

Cited by 16 publications

References 8 publications

10.1007/s11453-008-1015-z

10.1007/s11453-008-1015-z

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

11.1 Quantum dot diode lasers

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