2020
DOI: 10.1039/d0tc03470c
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Sb 5s2 lone pairs and band alignment of Sb2Se3: a photoemission and density functional theory study

Abstract: The presence of a lone pair of 5s electrons at the valence band maximum (VBM) of Sb2Se3 and the resulting band alignments are investigated using soft and hard x-ray photoemission...

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Cited by 22 publications
(46 citation statements)
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“…1,32 One-dimensional atomic chain structures, exhibited by this (Fig. 1) and related materials such as Sb Se 3 , 35 BiOI 32 and SbSI, 29,30 can yield benign grain boundaries, greatly reducing charge-carrier recombination in polycrystalline absorber materials. 32,74 The small electronic band gap (E g ∼ 1.1 eV), wide con-duction and valence bands, and relatively small electron effective mass (m e = 0.29) also favour defect-tolerant behaviour in this material.…”
Section: The Presence Of This Previously-hidden Polar Distortion Inmentioning
confidence: 90%
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“…1,32 One-dimensional atomic chain structures, exhibited by this (Fig. 1) and related materials such as Sb Se 3 , 35 BiOI 32 and SbSI, 29,30 can yield benign grain boundaries, greatly reducing charge-carrier recombination in polycrystalline absorber materials. 32,74 The small electronic band gap (E g ∼ 1.1 eV), wide con-duction and valence bands, and relatively small electron effective mass (m e = 0.29) also favour defect-tolerant behaviour in this material.…”
Section: The Presence Of This Previously-hidden Polar Distortion Inmentioning
confidence: 90%
“…c. Maximum PV efficiency (η max ) as a function of film thickness, using the SLME 60 and Blank et al 61 estimates for the radiative limit (Q i = 1). MAPI (5.70 eV) 72 , SbSI (5.37 eV) 30 and Sb 2 Se 3 (5.13 eV), 35 and slightly larger than that of FaSnI 3 (4.88 eV) 73 -favouring the formation of shallow acceptor defects which are innocuous to PV performance. The substantial mixed ionic-covalent character and lattice polarisability in Sn 2 SbS 2 I 3 , discussed previously, results in a strong dielectric screening (ε x,y,z = [51.3, 18.2, 22.4]) that will limit the electrostatic interactions between defects and charge carriers, thus reducing the probability of carrier capture and trapmediated recombination.…”
Section: The Presence Of This Previously-hidden Polar Distortion Inmentioning
confidence: 94%
See 1 more Smart Citation
“…22 This in turn implies that s orbitals will be relatively more prominent in HAXPES than in XPS spectra, as they will contribute a higher proportion of the total intensity at a higher incident photon energy, as found in previous studies on materials with ns 2 lone pairs. 9,17,23,24 HAXPES can also offer higher spectral resolution, but also has reduced surface sensitivity compared to XPS, so there are merits to using both techniques.…”
Section: Photoemission Of Ns 2 Lone Pair Statesmentioning
confidence: 99%
“…6,7 Lone pair materials An important feature of Sb 2 Se 3 is the contribution of the Sb 5s 2 lone pair to the valence band. 9 Materials with stereochemically active lone pairs are attracting growing interest because of the high power conversion efficiency of methyl-ammonium lead iodide (MAPI) solar cells. 1 There is growing evidence to suggest that a large part of the high performance of this material is due to the Pb 6s 2 lone pair, which is thought to underpin some of its desirable PV properties.…”
Section: Introductionmentioning
confidence: 99%