Sb and Bi surfactant effects on homo-epitaxy of GaAs on () patterned substrates

Te surfactant effects on the morphology of patterned (001) GaAs homoepitaxy

“…In contrast to studies of other surfactants (Sb,Bi,Cl) on GaAs [24,20], the presence of DETe in the vapor does not change the lateral growth rates of the patterned mesas. The lateral growth rates were measured from AFM data and are shown in Fig.…”

“…In a previous paper, we reported that increasing the f hop frequency in the kinetic simulation dramatically increased the lateral spread of patterned mesas [20]. Modifying the sticking coefficients and the ES barrier energy did not effect the lateral growth rates, but created significant morphological changes.…”

AP-MOVPE of thin GaAs1−xBix alloys

“…A very narrow growth conditions are reported by comparison between structural and optical characterizations. Stringfellow's group [9] at the University of Utah and other groups reported a description of the use of Bi as isoelectronic and/or surfactant to modify ordering, composition modulation, dopant incorporation, adatom diffusion, and surface structure.…”

Growth of GaAsBi/GaAs Multi Quantum Wells on (100) GaAs Substrates by Molecular Beam Epitaxy

“…Bismuth, which has an atomic mass number of 208, is the heaviest nonradioactive element in the periodic table. The Bi atom is approximately 25% larger in radius than Ga and As atoms, and tends to surface-segregate during growth [15], furthermore, improving the electronic properties of the material as a surfactant [16]. Hence, the composition of Bi in GaAs 1−x Bi x is strongly dependent on the growth temperature and is determined by a more complicated mechanism than that of conventional III-V alloys, e.g., InGaAs or AlGaAs.…”