Sb-enhanced nucleation in the homoepitaxial growth of Ag(111)

Vegt, H.A. van der; Vrijmoeth, J.; Behm, R. J.; Vlieg, E.

doi:10.1103/physrevb.57.4127

Cited by 69 publications

(31 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has been proposed that surfactants induce layer-by-layer growth on close-packed metal surfaces by changing the relative rates of various competing processes: surface diffusion on the terraces, diffusion across steps, attachment of adatoms at steps, and island nucleation [20]. However, while surfactants induce layer-by-layer growth in the 3-D regime of metal (111) surfaces, we find that Si induces layer-by-layer growth in the step-flow regime of GaN(OOOl) at temperatures as high as 990"C) [6].…”

Section: H Discussion and Conclusionmentioning

confidence: 99%

Investigations of Chemical Vapor Deposition of GaN Using Synchrotron Radiation

Thompson

Stephenson

Munkholm

et al. 2001

J. Electrochem. Soc.

View full text Add to dashboard Cite

We apply synchrotron X-ray analysis techniques to probe the surface structure of GaN films during synthesis by metallorganic chemical vapor deposition ͑MOCVD͒. Our approach is to observe the evolution of surface structure and morphology in real-time using grazing incidence X-ray scattering ͑GIXS͒. This technique combines the ability of X-rays to penetrate the chemical vapor deposition environment for in situ measurements, with the sensitivity of GIXS to atomic scale structure. Examples are presented from some of our studies of growth modes and surface evolution as a function of process conditions that illustrate the capabilities of synchrotron X-ray analysis during MOCVD growth. We focus on studies of the homoepitaxial growth mode, island coarsening dynamics, and effects of impurities.

show abstract

Section: H Discussion and Conclusionmentioning

confidence: 99%

Investigations of Chemical Vapor Deposition of GaN Using Synchrotron Radiation

Thompson

Stephenson

Munkholm

et al. 2001

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Surfactants have been commonly used in chemical solutions and crystal growth process. Introduction of small impurity as surfactant in thin films induces layer-by-layer type growth and has been observed in a variety of systems [25][26][27][28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

Surfactant controlled interfacial alloying in thermally evaporated Cu/Co multilayers

Amir

Gupta

2012

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…4,5,[10][11][12] In this paper, we focus specifically on Ag͑100͒ homoepitaxy, since this is a simple model system in which the pure-film characteristics are well understood. 13 Furthermore, we concentrate on the lateral morphology at low coverages of Ag, thereby gaining insights specifically into the nucleation process.…”

Section: Introductionmentioning

confidence: 99%

The effect of common gases on nucleation of metal islands: The role of oxygen in Ag(100) homoepitaxy

Layson

Evans

Fournée

et al. 2003

The Journal of Chemical Physics

View full text Add to dashboard Cite

Preexposure to molecular oxygen gas, O 2,g , can have a strong effect on the nucleation and growth of Ag islands on Ag(100) at 250 K. At this temperature, molecular oxygen dissociates efficiently at kink sites on steps. Subsequent deposition of Ag produces a far lower density of Ag ad islands than without oxygen. There is an associated increase in the Ag flux-scaling exponent, from 0.28 for the oxygen-free surface to 0.9 for the preexposed surface. Two-step deposition experiments show that species containing atomic oxygen diffuse freely across terraces and steps at this temperature and on the time scale of deposition.We hypothesize that the nucleating species contains both Ag and O, and that nucleation of islands is highly reversible ~critical size i>>1). The diffusion of small islands, if it occurs, is not sufficient to explain the data. Preexposure to molecular oxygen gas, O 2,g , can have a strong effect on the nucleation and growth of Ag islands on Ag͑100͒ at 250 K. At this temperature, molecular oxygen dissociates efficiently at kink sites on steps. Subsequent deposition of Ag produces a far lower density of Ag ad islands than without oxygen. There is an associated increase in the Ag flux-scaling exponent, from 0.28 for the oxygen-free surface to 0.9 for the preexposed surface. Two-step deposition experiments show that species containing atomic oxygen diffuse freely across terraces and steps at this temperature and on the time scale of deposition. We hypothesize that the nucleating species contains both Ag and O, and that nucleation of islands is highly reversible ͑critical size iӷ1). The diffusion of small islands, if it occurs, is not sufficient to explain the data.

show abstract

Sb-enhanced nucleation in the homoepitaxial growth of Ag(111)

Cited by 69 publications

References 18 publications

Investigations of Chemical Vapor Deposition of GaN Using Synchrotron Radiation

Investigations of Chemical Vapor Deposition of GaN Using Synchrotron Radiation

Surfactant controlled interfacial alloying in thermally evaporated Cu/Co multilayers

The effect of common gases on nucleation of metal islands: The role of oxygen in Ag(100) homoepitaxy

Contact Info

Product

Resources

About