Sb + Lu co-doped TiO2 ceramics with ultralow loss, high permittivity, and excellent DC bias voltage stability

Pioneering dielectric materials of Sn-doped Nb0.025Ti0.975O2 ceramics with excellent temperature and humidity stability for advanced ceramic capacitors

“…The results in the Sn-NTO samples revealed the spectra consisting of four peaks (generally three peaks and a second-order Raman scattering in the rutile structure) similar to in the rutile TiO 2 . 14,24 Therefore, the confirmation of the exclusive presence of rutile TiO 2 in the Sn-NTO samples was supported by XRD, mapping image of elements, and Raman spectroscopy. Each peak indicated a different response of structure.…”

“…1(b), the 2 θ of (110) diffraction peaks, the strongest peak, shifted toward lower angles when Sn 4+ concentrations increased, which is similar to other works. 14,23,24 The results were attributed to the increasing lattice parameters ( a and c ) and bond lengths of the crystal. Additionally, it is important to note that the apparent splitting of the (110) peak at higher 2 θ values can be attributed to the Kα 2 component of the Cu radiation source used in the XRD analysis.…”

“…14 Meanwhile, the A 1g modes showed a slight shift to higher frequency side in the range of 606 to 607 cm −1 related to the change in the Ti–O stretch modes after the replacement of Ti with Sn and Nb. 15,24…”

“…8 Additionally, at higher binding energies, the Ti 2p 1/2 peaks associated with Ti 3+ and Ti 4+ states exhibited lower intensity peaks at 462.68 eV and 464.30 eV, respectively. 15,24 The presence of Ti 3+ within the structures can be attributed to charge compensation, whereby Ti 4+ was converted into Ti 3+ through donor doping with Nb 5+ . This phenomenon was described by eqn (1) and (2) as follows:Ti 4+ + e → Ti 3+ …”

“…3 The diameter of these semicircular arcs can be used to consider the resistance values of each electrical response part. 7,17,24 Furthermore, the grain boundary resistance ( R gb ) value is significantly large compared to the grain resistance ( R g ) value and R gb of other GDP materials, which contributed to achieving both low tan δ value and value within ±15% over a wide range. 6,42,43 Meanwhile, the R g values were on the order of ∼10 2 and decreased with increasing Sn 4+ concentrations.…”