Sb₂(S_1−x Se _x )₃ solar cells: the impact of radiative and non-radiative loss mechanisms

Abstract

The compound Sb2(S1−xSex)3 has recently attracted a great deal of attention from the scientific community for solar cell applications. However, Sb2(S1−xSex)3 inorganic solar cell efficiencies are still limited to values lower than 7%, further studies contributing to a better understanding of the limiting factors behind this technology being necessary. In particular, no theoretical works on Sb2(S1−xSex)3 solar cell modeling have been previously reported. In this work, we present results on Sb2(S1−xSex)3 solar cell modeling under the radiative and non-radiative limits for the first time, where our results are compared to experimental reported data. First, the impact of different Se/(S + Se) compositional ratios and absorber thicknesses on Sb2(S1−xSex)3 solar cell parameters under the radiative limit is studied, demonstrating that an efficiency of 29% can be achieved under Se/(S + Se) compositional ratios in the range of 0.34–0.48 for Sb2(S1−xSex)3 thicknesses higher than 1.5 µm. Furthermore, the impact of different linearly graded band-gaps and a notch-shape configuration of grading are evaluated. In addition, the role of different Sb2(S1−xSex)3 minority carrier lifetime values on solar cells is estimated, demonstrating that for absorbers described by minority carrier lifetime values about 10−9 s, it would be better to fabricate Sb2(S1−xSex)3 solar cells with Se/(S + Se) compositional ratios lower than 0.4. Finally, the influence of low illumination intensity values is presented and discussed.

State of the Art on Sb2(S1-x, Sex)3 Thin Film Solar Cells

“…To the best of our knowledge, no study has addressed this issue prior to our work. [28] We have reported for the first time a theoretical study to seek for an explanation of the origin of these low efficiencies. We have modelled Sb2(Se1-xSx)3 under the radiative and non-radiative limit varying the compositional ratio Se/(S+Se) in a range of 0 ≤ x ≤ 1 and the thickness of the absorber.…”

“…Efficiency of Sb2(S1-xSex)3 solar cell considering Se/ (S+Se) compositional ratio as a function of (a) absorber thickness under the radiative limit, (b) minority carrier lifetime. [28] On the other hand, we made the analysis of the possible impact of recombination centers under the non-radiative limit employing the Shockley-Read-Hall theory. [59] We found that the conversion efficiency decays from 28% (absorber with a minority carrier lifetime of 1 ns) to 2% for very low minority carrier lifetimes of around 10 -10 s (Figure 5b).…”

“…[16][17][18] Although the available experimental measurements of conversion efficiencies point to ~3.6%-7.6%, [19][20][21][22][23][24][25][26][27] a recent theoretical modeling of solar cells based on Sb2(S1-x, Sex)3 shows that higher efficiencies of up to 28% can be achieved through variation of the Se/(S+Se) compositional ratio. [28] Given the importance of the Sb2(S1-x, Sex)3 semiconductor material in the develop of more efficient solar cells, a minireview of the physical properties of the Sb2S3, Sb2Se3, Sb2(S1-x, Sex)3 semiconductor materials is presented, along with a review of the main deposition techniques to synthesize them. In addition, a summary of a previous theoretical analysis of solar cells based on Sb2(S1-x, Sex)3 semiconductor is presented, which could contribute to a further efficiency promotion.…”

Status of materials and device modelling for kesterite solar cells

“…Figure 4 illustrates results on efficiency (η), short-circuit current density (J sc ), open-circuit voltage (V oc ), and fill factor (FF) of CZTSSe solar cells as functions of the S/(S+Se) compositional ratio considering an absorber thickness of 2 μm. Details of the calculation procedure and parameters can be found in the literature [24,25]. Under the radiative limit, efficiency values in the range of 26.3%-29.6% are expected, markedly higher than the experimental values reported for this technology.…”

SnSe Solar Cells: Current Results and Perspectives

“…Further details on calculations can be found in reference. [14] The impact of SnSe thickness on open-circuit voltage, short-circuit current density, and efficiency is illustrated in Figure 1. It is observed that maximum open-circuit voltage values in the range of 624-702 mV are expected under the radiative limit.…”