Sb₂(Se_1‐xS_x)₃ Thin‐Film Solar Cells Fabricated by Single‐Source Vapor Transport Deposition

Abstract

The properties of Sb2(Se1‐xSx)3 alloy films can be continuously tuned by changing its composition, enabling potentially better device efficiency compared to the Sb2S3 or Sb2Se3 counterparts. Fabrication of Sb2(Se1−xSx)3 films with good uniformity and orientation are prerequisites to realize their full potential. Here, pure‐phase and high‐uniformity Sb2(Se1‐xSx)3 absorbers are successfully produced via a vapor transport deposition method employing a single evaporation source. Increasing the travelling distance of vapor particles can improve the morphology and crystallinity of Sb2(Se1‐xSx)3 films, and as a result, compact Sb2(Se1‐xSx)3 films with strong preferential [221] orientation and uniform composition throughout the whole film are obtained. Further, the CdS surface is treated with H2O2 solution and a device with a champion efficiency of 6.30% is obtained, a new efficiency record for Sb2(Se1‐xSx)3 based thin‐film solar cells without a hole‐transporting layer.

Boosting VOC of antimony chalcogenide solar cells: A review on interfaces and defects

“…Besides, H 2 O 2 treated CdS layer can improve the CdS/Sb 2 (S,Se) 3 heterojunction quality, thereby, enhancing the device PCE from 5.42% for pure CdS to 6.07% in the modified case. [ 77 ]…”

Review of Recent Progress in Antimony Chalcogenide‐Based Solar Cells: Materials and Devices

“…Studies revealed that Sb 1.9 S 2.2 Se 0.9 has a bandgap of 1.52 eV, falling into the ideal bandgap in the Shockley–Queisser limit. During the publication of the review, a certified PCE of 6.14% and a record efficiency of 6.3% for Sb 2 (S x Se 1−x ) 3 solar cells were realized by using hydrothermal method and VTD method to fabricate Sb 2 (S x Se 1−x ) 3 films, respectively …”

“…During the publication of the review, a certified PCE of 6.14% and a record efficiency of 6.3% for Sb 2 (S x Se 1Àx ) 3 solar cells were realized by using hydrothermal method and VTD method to fabricate Sb 2 (S x Se 1Àx ) 3 films, respectively. [115,116]…”

Alternative Lone‐Pair ns2‐Cation‐Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications

“…Through impurity incorporation, or an optimized deposition process, the absorber efficiency can be improved to 6.30% and 7.6%, respectively. [ 245–247 ] Another proposed strategy is to build an electric field to separate the electron–hole pairs. Considering the low p‐type conductivity in Sb 2 Se 3 , Chen et al.…”

“…Thus, by mapping a series of materials, including PbX (X = S, Se, Te), Sb 2 Te 3 , Bi 2 X 3 (X = Se, Te), and inorganic halide perovskites, into a 2D space with the ES and ET as two coordinates, they found MVB had well‐defined borders to covalent, and iono‐covalent regions, indicating its distinction. [ 229–307 ] Such a map demonstrated that the MVB mechanism approximately possessed one shared electron and moderate electron transfer between adjacent atoms. This predictive model can also give rise to the favorable characteristics in above materials, including large Born effective charge, high optical dielectric constants, strong optical interband transition, etc.…”