Sb2(S, Se)3-based photovoltaic cell with MoS2 as a hole transport layer: a numerical investigation

Mamta, .; Kumar, Rahul; Kumari, Raman; Maurya, K. K.; Singh, Vidya Nand

doi:10.1016/j.mtsust.2022.100218

Cited by 6 publications

(9 citation statements)

References 35 publications

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“…[ 6,19 ] And noticeably, our systematic simulation study also proved that the annealed MnS‐HTL enhances not only the narrow bandgap Sb 2 (S,Se) 3 devices but also the wider bandgap Sb 2 (S,Se) 3 devices, which is not reported, so far (see Table 2). Previously reported simulated device performances, for example, Mamta et al (25.6% [ 33 ] ), Ayala‐Mato et al (18.43% [ 9 ] ), and Gharibshahian et al (15.65% [ 39 ] ) are higher than the current device PCE. The main reason for this difference is the choice of different ETL/HTL layers, device configurations, and various physical input parameters, for example, thickness range (absorber = 2 μm [ 39 ] and HTL = 2 μm [ 33 ] ), thus generate higher J sc (over 32 mA cm −2 ).…”

Section: Resultsmentioning

confidence: 94%

“…[16] ITO/CdS/Sb 2 (S,Se) Sim. [33] FTO/CdS/Sb 2 (S,Se) 3 /PbS NP/carbon 18.80 0.650 65.06 8.0 Exp. [44] FTO/TiO 2 /Sb 2 (S,Se) 3 /Spiro-OMeTAD/Au 21.10 0.520 52.…”

Section: Resultsmentioning

confidence: 99%

“…[6] Table 1 displays all the layers' (i.e., ITO, CdS, absorber, MnS-HTL) physical input parameters collected from the previously published experimental and computational reports. [6,19,28,33] The 300 K temperature with the AM 1.5G solar spectrum illumination was used for the whole simulation from the ITO/ETL side. Electron and hole thermal velocities are fixed at 1 Â 10 7 cm s À1 .…”

Section: Device Structure and Simulation Detailsmentioning

confidence: 99%

“…[ 23,24,28–30 ] Apart from the experimental findings, the theoretical investigation, especially using drift–diffusion SCAPS‐1D software simulation, helps the researchers further understand the device mechanism. [ 31–35 ]…”

Section: Introductionmentioning

confidence: 99%

“…[23,24,[28][29][30] Apart from the experimental findings, the theoretical investigation, especially using drift-diffusion SCAPS-1D software simulation, helps the researchers further understand the device mechanism. [31][32][33][34][35] So far, no numerical simulation study has been available for MnS-HTL, especially using post-annealing and non-annealing treatment-based Sb 2 (S,Se) 3 thin-film solar cells. In this regard, initially, based on the experimental report, five different narrow to wider bandgap-based HTL-free Sb 2 (S,Se) 3 solar cells were constructed in this work using a drift-diffusion solar-cell capacitance simulator (SCAPS-1D).…”

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confidence: 99%

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Effect of Annealed and Non‐Annealed Inorganic MnS Hole‐Transport Layer for Efficient Sb₂(S,Se)₃ Solar Cells: A Theoretical Justification

Sekar

Mayarambakam

2023

Physica Status Solidi (b)

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In solar-cell applications, metal chalcogenides have been widely used as light-harvesting materials, especially CIGS and CdTe solar cells, demonstrating a power conversion efficiency (PCE) of 23.35% [1] and over 22%. [2,3] Achieving net-zero carbon emission in the near future, and also due to the scarcity and toxicity of Ga and Cd, restricts further development. In recent years, the antimony chalcogenides family have been considered as a promising contender for absorber material, especially antimony selenide, Sb 2 Se 3 , antimony sulfur, Sb 2 S 3 , and antimony sulfoselenide, Sb 2 (S,Se) 3 . These materials show excellent photoelectric properties, such as tunable bandgap (1.1-1.7 eV), high-absorption coefficient (>10 5 cm À1 ), stability against moisture, as well as low toxicity, environmental friendliness, earth abundance, and finally, simple preparation process. [4][5][6][7][8][9][10] So far, the Sb 2 (S,Se) 3 solar-cell PCE has been quickly enhanced (i.e., over 10%) by material preparation, device configuration, defect passivation, and interface modification. [5,[11][12][13] And these devices are made up of an expensive organic Spiro-OMeTAD hole-transport layer (HTL), demonstrating poor device stability due to the bis(trifluoromethane) sulfonimide lithium salt (Li-TFSI) doping into Spiro-OMeTAD. Moreover, the toxicity of the dopant 4-tert-butylpyridine, additive acetonitrile, and the solvent chlorobenzene are hazardous to the human central nervous system. [6,14,15] It is well-known that the HTL plays a crucial role in determining the device's photovoltaic (PV) performance by extracting photogenerated holes from the absorber to the electrode and it's generating a built-in electric field at the rear interface. Therefore, choosing the HTL material with high hole mobility, high stability, low toxicity, and low cost is essential to enhance PV performance with improved device stability. According to the published reports, notably, the Tao Chen group employed different HTLs for Sb 2 (S,Se) 3 solar cells than conventional Spiro-OMeTAD, such as CsPbBr 3 perovskite quantum dots, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) doped copper phthalocyanine, and DTPThMe-ThTPA, demonstrating PCE 7.82%, [16] 8.57%, [17] and 9.7%, [18] respectively. However, the aforementioned HTLs are prepared by the solution process, which is unsuitable for large-scale productions. In that consideration, a thermally evaporated low-cost inorganic manganese sulfide (MnS) semiconductor is an excellent choice for the HTL, and recently, Qian et al. and Wang et al. used this MnS-HTL in Sb 2 (S,Se) 3 solar cells, achieving 9.6% [6] and 9.24% [19] of PCE. Also, their results evidently explain that the post-annealing treatment for MnS-HTL significantly influences the PV performance.

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Section: Resultsmentioning

confidence: 94%

“…[16] ITO/CdS/Sb 2 (S,Se) Sim. [33] FTO/CdS/Sb 2 (S,Se) 3 /PbS NP/carbon 18.80 0.650 65.06 8.0 Exp. [44] FTO/TiO 2 /Sb 2 (S,Se) 3 /Spiro-OMeTAD/Au 21.10 0.520 52.…”

Section: Resultsmentioning

confidence: 99%

Section: Device Structure and Simulation Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Effect of Annealed and Non‐Annealed Inorganic MnS Hole‐Transport Layer for Efficient Sb₂(S,Se)₃ Solar Cells: A Theoretical Justification

Sekar

Mayarambakam

2023

Physica Status Solidi (b)

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Modeling of Copper Zinc Tin Sulfide Solar Cells with Various Buffers Using SCAPS‐1D

Zhang,

Chan,

2023

Physica Status Solidi (b)

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Recently, researchers have shown a strong interest in research on quaternary semiconductor copper zinc tin sulfide (CZTS) photovoltaic cells. These cells have a high absorption coefficient, a direct bandgap, and excellent electrical properties. However, the toxicity of cadmium (Cd) in the cadmium sulfide (CdS) buffer layer in standard CZTS solar cells, can generate severe environmental contamination that is hazardous to humans. As a result, building a Cd‐free CZTS solar cell is critical. Meanwhile, given that the peak power conversion efficiency of CZTS solar cells stands at a modest 11%, this study is dedicated to identifying an optimal approach for replacing the environmentally hazardous CdS layers to enhance overall efficiency. SCAPS‐1D is a one‐dimensional solar cell simulation program commonly used to examine proposed solar cells without building them. This study highlights the performance of CZTS with various nontoxic buffer layers, as well as the key results obtained through numerical research with SCAPS‐1D.

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Numerical analysis of performance enhancement in KSnI3-based perovskite solar cells with Sb2Se3 as a hole transport layer

Belarbi

2025

Materials Science and Engineering: B

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Sb2(S, Se)3-based photovoltaic cell with MoS2 as a hole transport layer: a numerical investigation

Cited by 6 publications

References 35 publications

Effect of Annealed and Non‐Annealed Inorganic MnS Hole‐Transport Layer for Efficient Sb₂(S,Se)₃ Solar Cells: A Theoretical Justification

Effect of Annealed and Non‐Annealed Inorganic MnS Hole‐Transport Layer for Efficient Sb₂(S,Se)₃ Solar Cells: A Theoretical Justification

Modeling of Copper Zinc Tin Sulfide Solar Cells with Various Buffers Using SCAPS‐1D

Numerical analysis of performance enhancement in KSnI3-based perovskite solar cells with Sb2Se3 as a hole transport layer

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Sb2(S, Se)3-based photovoltaic cell with MoS2 as a hole transport layer: a numerical investigation

Cited by 6 publications

References 35 publications

Effect of Annealed and Non‐Annealed Inorganic MnS Hole‐Transport Layer for Efficient Sb2(S,Se)3 Solar Cells: A Theoretical Justification

Effect of Annealed and Non‐Annealed Inorganic MnS Hole‐Transport Layer for Efficient Sb2(S,Se)3 Solar Cells: A Theoretical Justification

Modeling of Copper Zinc Tin Sulfide Solar Cells with Various Buffers Using SCAPS‐1D

Numerical analysis of performance enhancement in KSnI3-based perovskite solar cells with Sb2Se3 as a hole transport layer

Contact Info

Product

Resources

About

Effect of Annealed and Non‐Annealed Inorganic MnS Hole‐Transport Layer for Efficient Sb₂(S,Se)₃ Solar Cells: A Theoretical Justification

Effect of Annealed and Non‐Annealed Inorganic MnS Hole‐Transport Layer for Efficient Sb₂(S,Se)₃ Solar Cells: A Theoretical Justification