SbVO4 doped ZnO–V2O5-based varistor ceramics: microstructure, electrical properties and conductive mechanism

Guo, Ruli; Fang, Liang; Zhou, Huanfu; Chen, Xiuli; Chu, Dongjin; Chan, Baocheng; Qin, Yan

doi:10.1007/s10854-013-1161-y

Cited by 6 publications

(4 citation statements)

References 16 publications

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“…Guo et al [ 155 ] prepared ZnO-0.5 mol.% V 2 O 5 varistors doped with 2 mol.% MnO 2 -0.1 mol.% Nb 2 O 5 -0.5 mol.% Bi 2 O 3 -x mol.% SbVO 4 (x = 0.1, 0.3, 0.5, 0.7). They obtained SbVO 4 powder by mechanically mixing Sb 2 O 3 and V 2 O 5 powders in a molar ratio of 1:1.…”

Section: Considerations Of the Crystalline Structure And Physics Of Z...mentioning

confidence: 99%

“…The MOVs with 0.3 mol.% SbVO 4 yielded enhanced nonlinearity ( α = 51, J L = 13.4 μA/mm 2 , and E B = 4.16 kV/cm). Guo et al [ 155 ] ascribed the inhibition of the ZnO grain growth and good varistor properties to the Zn 2.33 Sb 0.67 O 4 spinel particle pinning mechanism [ 150 ], which depends on Zener’s drag (pinning pressure) phenomenon, as detailed elsewhere [ 156 ]. However, the authors did not investigate the formation of IBs in the ZnO grains.…”

Section: Considerations Of the Crystalline Structure And Physics Of Z...mentioning

confidence: 99%

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Effects of Dopants and Processing Parameters on the Properties of ZnO-V2O5-Based Varistors Prepared by Powder Metallurgy: A Review

Lungu¹

2023

Materials

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This article reviews the progress in developing ZnO-V2O5-based metal oxide varistors (MOVs) using powder metallurgy (PM) techniques. The aim is to create new, advanced ceramic materials for MOVs with comparable or superior functional properties to ZnO-Bi2O3 varistors using fewer dopants. The survey emphasizes the importance of a homogeneous microstructure and desirable varistor properties, such as high nonlinearity (α), low leakage current density (JL), high energy absorption capability, reduced power loss, and stability for reliable MOVs. This study investigates the effect of V2O5 and MO additives on the microstructure, electrical and dielectric properties, and aging behavior of ZnO-based varistors. The findings show that MOVs with 0.25–2 mol.% V2O5 and MO additives sintered in air over 800 °C contain a primary phase of ZnO with a hexagonal wurtzite structure and several secondary phases that impact the MOV performance. The MO additives, such as Bi2O3, In2O3, Sb2O3, transition element oxides, and rare earth oxides, act as ZnO grain growth inhibitors and enhance the density, microstructure homogeneity, and nonlinearity. Refinement of the microstructure of MOVs and consolidation under appropriate PM conditions improve their electrical properties (JL ≤ 0.2 mA/cm2, α of 22–153) and stability. The review recommends further developing and investigating large-sized MOVs from the ZnO-V2O5 systems using these techniques.

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Section: Considerations Of the Crystalline Structure And Physics Of Z...mentioning

confidence: 99%

Section: Considerations Of the Crystalline Structure And Physics Of Z...mentioning

confidence: 99%

Effects of Dopants and Processing Parameters on the Properties of ZnO-V2O5-Based Varistors Prepared by Powder Metallurgy: A Review

Lungu¹

2023

Materials

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“…At present, ZnO‐based electronic devices are developing toward miniaturization, multifunctionalization, and low working voltage, exemplified by the advent of multilayer chip varistors (MLCV). [ 5 ] However, a great challenge for MLCV is the cofiring of thick ceramic films and inner electrodes at high sintering temperatures.…”

Section: Introductionmentioning

confidence: 99%

An Ultralow Concentration of Cr₂O₃ Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics

Cheng,

Zheng,

Zeng

et al. 2024

Physica Rapid Research Ltrs

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Low working voltage‐driven ZnO‐based varistor ceramics play an important role in the multilayer chip varistors, which require a low sintering temperature of ZnO varistor for its low energy consumption. Herein, a remarkable reduction of the sintering temperature from the usual 1100–1300 °C to 950 °C is successfully achieves in the ZnO ceramics via a certain 0.05 mol% of Cr2O3 dopants. The underlying mechanism is found to be involved with the formation of basal‐plane inversion boundaries between the ZnO grains, which can promote the rapid grain growth within the ceramics. Furthermore, the ZnO varistors with 0.05 mol% Cr2O3 dopant exhibit excellent performance. A low breakdown voltage of 416 V mm−1, a high nonlinear coefficient of 39, and a low leakage current of 3.4 μA are obtained simultaneously. This work presents an effective and promising approach for the cost‐efficient preparation of high‐performance ZnO‐based varistors, which have particular significance for the application of multilayer chip varistors with low working voltage.

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“…ZnO varistors are widely utilized as surge absorption devices in electronic circuits and electrical power systems owing to their excellent nonlinear characteristic and large surge-energy absorption capability [1][2][3][4]. The excellent nonlinear properties of ZnO varistors come from the additive oxides, such as Bi2O3, Pr6O11, Co2O3, MnO2, Cr2O3 etc.…”

Section: Introductionmentioning

confidence: 99%

TiO<sub>2</sub> Added Zn-Bi Based Varistors: Microstructure, I-V, Flow and Aging Characteristics

Hao

Zhou

Guo

et al. 2014

KEM

Self Cite

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TiO2 was added in Zn-Bi based varistors to enhance the grain growth of ceramics and the effects of TiO2 addition on the microstructure, I-V, flow and aging characteristics of Zn-Bi varistors were studied. The voltage-gradient of samples decreased to minimum value of 30.6 V/mm when the TiO2 content was 0.6 mol%, but increased with further increasing TiO2 content. The variation trend of average grain size was just the opposite of the voltage-gradient. 0.6 mol% TiO2 added samples have a more unify microstructure and excellent three parameter values with IL=5.7μA, E1mA=30.6V/mm, α=25.8. After Dc aging at 125 oC for 7h, the voltage variation of samples is very slow (~-4.1%).

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SbVO4 doped ZnO–V2O5-based varistor ceramics: microstructure, electrical properties and conductive mechanism

Cited by 6 publications

References 16 publications

Effects of Dopants and Processing Parameters on the Properties of ZnO-V2O5-Based Varistors Prepared by Powder Metallurgy: A Review

Effects of Dopants and Processing Parameters on the Properties of ZnO-V2O5-Based Varistors Prepared by Powder Metallurgy: A Review

An Ultralow Concentration of Cr₂O₃ Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics

TiO<sub>2</sub> Added Zn-Bi Based Varistors: Microstructure, I-V, Flow and Aging Characteristics

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SbVO4 doped ZnO–V2O5-based varistor ceramics: microstructure, electrical properties and conductive mechanism

Cited by 6 publications

References 16 publications

Effects of Dopants and Processing Parameters on the Properties of ZnO-V2O5-Based Varistors Prepared by Powder Metallurgy: A Review

Effects of Dopants and Processing Parameters on the Properties of ZnO-V2O5-Based Varistors Prepared by Powder Metallurgy: A Review

An Ultralow Concentration of Cr2O3 Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics

TiO<sub>2</sub> Added Zn-Bi Based Varistors: Microstructure, I-V, Flow and Aging Characteristics

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An Ultralow Concentration of Cr₂O₃ Dopants‐Driven Lower Temperature Sintering ZnO‐Based Varistor Ceramics