Sc3N@C80 and La@C82 doped graphene for a new class of optoelectronic devices

Jayanand, Kishan; Chugh, Srishti; Adhikari, Nirmal; Min, Mi‐Sook; Echegoyen, Luís; Kaul, Anupama B.

doi:10.1039/c9tc06145b

Cited by 30 publications

(14 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The EQE of the hybrid GQDs/MoS 2 and the bare MoS 2 were calculated to be 241 and 14% at 400 nm, respectively, as shown in Figure d. As a result, we confirmed that the hybrid GQD/MoS 2 structure exhibits a higher photodetection capability than the bare MoS 2 device at 400 nm and over a broad wavelength range up to 1100 nm, with E g for the GQDs ∼2.5 eV. , Since the Fermi level E F of MoS 2 is lower than that of GQDs, electrons diffuse from the GQDs into MoS 2 , thus forming a built-in electric field at the hybrid GQD/MoS 2 interface. In their recent work, Li et al recorded an asymmetrical screening response from few layer graphene and MoS 2 .…”

Section: Resultssupporting

confidence: 65%

“…Hybrid structures of MoS 2 integrated with other 2D materials are likely to show high quantum efficiency since the built-in field acting in ultrathin heterostructures over large contact areas causes the photogenerated electron–hole pairs to be separated more rapidly with a higher efficiency . At the same time, quantum dots (QDs) such as graphene (G-) QDs, PbS, PbSe, and CdTe integrated with 2D materials are reported to show very high gain and optical sensitivity in phototransistors due to the unique features of QDs. ,− …”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Photophysical Dynamics in Semiconducting Graphene Quantum Dots Integrated with 2D MoS₂ for Optical Enhancement in the Near UV

Min

Sakri

Saenz

et al. 2021

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

The hybrid structure of zero-dimensional (0D) graphene quantum dots (GQDs) and semiconducting two-dimensional (2D) MoS2 has been investigated, which exhibit outstanding properties for optoelectronic devices surpassing the limitations of MoS2 photodetectors where the GQDs extend the optical absorption into the near-UV regime. The GQDs and MoS2 films are characterized by Raman and photoluminescence (PL) spectroscopies, along with atomic force microscopy. After outlining the fabrication of our 0D–2D heterostructure photodetectors comprising GQDs with bulk MoS2 sheets, their photoresponse to the incoming radiation was measured. The hybrid GQD/MoS2 heterostructure photodetector exhibits a high photoresponsivity R of more than 1200 A W–1 at 0.64 mW/cm2 at room temperature T. The T-dependent optoelectronic measurements revealed a peak R of ∼544 A W–1 at 245 K, examined from 5.4 K up to 305 K with an incoming white light power density of 3.2 mW/cm2. A tunable laser revealed the photocurrent to be maximal at lower wavelengths in the near ultraviolet (UV) over the 400–1100 nm spectral range, where the R of the hybrid GQDs/MoS2 was ∼775 A W–1, while a value of 2.33 × 1012 Jones was computed for the detectivity D* at 400 nm. The external quantum efficiency was measured to be ∼99.8% at 650 nm, which increased to 241% when the wavelength of the incoming laser was reduced to 400 nm. Time-resolved measurements of the photocurrent for the hybrid devices resulted in a rise time τrise and a fall time τfall of ∼7 and ∼25 ms, respectively, at room T, which are 10× lower compared to previous reports. From our promising results, we conclude that the GQDs exhibit a sizable band gap upon optical excitation, where photocarriers are injected into the MoS2 films, endowing the hybrids with long carrier lifetimes to enable efficient light absorption beyond the visible and into the near-UV regime. The GQD–MoS2 structure is thus an enabling platform for high-performance photodetectors, optoelectronic circuits, and quantum devices.

show abstract

Section: Resultssupporting

confidence: 65%

Section: Introductionmentioning

confidence: 99%

Photophysical Dynamics in Semiconducting Graphene Quantum Dots Integrated with 2D MoS₂ for Optical Enhancement in the Near UV

Min

Sakri

Saenz

et al. 2021

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

show abstract

“…[182] These properties have been extended to additional graphitic derivatives, e.g. hybrid materials [183,184] and GQDs. [185,186]…”

Section: Optical and Optoelectronic Applicationsmentioning

confidence: 99%

Advances and Trends in Chemically Doped Graphene

Ullah

Shi

Zhou

et al. 2020

Adv Materials Inter

View full text Add to dashboard Cite

Chemically doped graphene materials are fascinating because these have different desirable attributes with possible synergy. The inert and gapless nature of graphene can be changed by adding a small number of heteroatoms to substitute carbon in the lattice. The doped material may display superior catalytic activities; durable, fast, and selective sensing; improved magnetic moments; photoresponses; and activity in chemical reactions. In the current review, recent advances are covered in chemically doped graphene. First, the different types of heteroatoms, their bonding configurations, and briefly their properties are discussed. This is followed by the description of various synthesis and analytical methods essential for assessing the characteristics of heterographene with specific focus on the selected graphene materials of different dopants (particularly, single dopants, including N, B, S, P, first three halogens, Ge, and Ga, and codopants, such as N/O), and more importantly, up‐to‐date applications enabled by the intentional doping. Finally, outlook and perspectives section review the existing challenges, future opportunities, and possible ways to improve the graphitic materials. The goal is to update and inspire the readers to establish novel doped graphene with valuable properties and for current and futuristic applications.

show abstract

“…Jayanand et al prepared PDs using two types of EMFs deposited on graphene via the electrophoretic method . The authors fabricated PDs using an EMF-deposited graphene channel (graphene/Sc 3 N@C 80 and graphene/La@C 82 ).…”

Section: Photodetectormentioning

confidence: 99%

Exploring Endohedral Metallofullerenes for Advanced Thin-Film Device Applications toward Next-Generation Electronics

Nam,

Seo,

Han

et al. 2023

Chem. Mater.

View full text Add to dashboard Cite

Endohedral metallofullerenes (EMFs) showcase unique properties such as their capacity to stabilize isolated metal atoms and reactive metal clusters, rendering them highly appealing for diverse applications, most notably in electronic devices. This perspective examines EMFs in next-generation thinfilm devices, highlighting significant discoveries in device applications that incorporate EMFs. It casts a spotlight on significant advancements in device applications that integrate EMFs, with an acute focus on device performance and the crucial role of high crystallinity in achieving peak efficiency. It postulates that tailoring the size or functional groups of the fullerene cage may fulfill these needs and, in turn, transform the electrical properties of these devices. This perspective emphasizes the pressing need for more in-depth research to surmount existing limitations. The devices scrutinized in this review include organic field-effect transistors, photodetectors, organic photovoltaics, and perovskite photovoltaics. The use of EMFs in these diverse device structures is explored, concentrating on performance issues and the necessity for enhancements in select electrical and chemical properties for peak efficiency and functionality. This review serves as an exceptional resource and benchmark for fullerene researchers aiming to probe the application of EMFs in devices.

show abstract

Sc₃N@C₈₀ and La@C₈₂ doped graphene for a new class of optoelectronic devices

Abstract: Hybrid graphene photodetectors (PDs) with endohedral Sc3N@C80 and La@C82 were used by the Kaul Research Group at the University of North Texas to dope graphene p-type and n-type, respectively, that resulted in significant optoelectronic property enhancement of the PDs.

Cited by 30 publications

References 59 publications

Photophysical Dynamics in Semiconducting Graphene Quantum Dots Integrated with 2D MoS₂ for Optical Enhancement in the Near UV

Photophysical Dynamics in Semiconducting Graphene Quantum Dots Integrated with 2D MoS₂ for Optical Enhancement in the Near UV

Advances and Trends in Chemically Doped Graphene

Exploring Endohedral Metallofullerenes for Advanced Thin-Film Device Applications toward Next-Generation Electronics

Contact Info

Product

Resources

About

Sc3N@C80 and La@C82 doped graphene for a new class of optoelectronic devices

Abstract: Hybrid graphene photodetectors (PDs) with endohedral Sc3N@C80 and La@C82 were used by the Kaul Research Group at the University of North Texas to dope graphene p-type and n-type, respectively, that resulted in significant optoelectronic property enhancement of the PDs.

Cited by 30 publications

References 59 publications

Photophysical Dynamics in Semiconducting Graphene Quantum Dots Integrated with 2D MoS2 for Optical Enhancement in the Near UV

Photophysical Dynamics in Semiconducting Graphene Quantum Dots Integrated with 2D MoS2 for Optical Enhancement in the Near UV

Advances and Trends in Chemically Doped Graphene

Exploring Endohedral Metallofullerenes for Advanced Thin-Film Device Applications toward Next-Generation Electronics

Contact Info

Product

Resources

About

Sc₃N@C₈₀ and La@C₈₂ doped graphene for a new class of optoelectronic devices

Photophysical Dynamics in Semiconducting Graphene Quantum Dots Integrated with 2D MoS₂ for Optical Enhancement in the Near UV

Photophysical Dynamics in Semiconducting Graphene Quantum Dots Integrated with 2D MoS₂ for Optical Enhancement in the Near UV