Scalability of strained silicon CMOSFET and high drive current enhancement in the 40 nm gate length technology

Sanuki, T.; Oishi, A.; Morimasa, Y.; Aota, Shin-ichi; Kinoshita, Takenari; Hasumi, R.; Takegawa, Y.; Isobe, K.; Yoshimura, Hideyuki; Iwai, M.; Sunouchi, K.; Noguchi, T.

doi:10.1109/iedm.2003.1269167

Cited by 30 publications

(11 citation statements)

References 0 publications

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“…Our interpretation of the results is supported, although somewhat indirectly, by reports of enhanced activation of boron driven by compressive strain [13,14]. In this case, where the lattice strain field is compressive and the local strain field around the relatively small substitutional B atom is tensile, B activation is seen to increase.…”

Section: Resultssupporting

confidence: 71%

Enhanced n-type dopant solubility in tensile-strained Si

et al. 2008

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Section: Resultssupporting

confidence: 71%

Enhanced n-type dopant solubility in tensile-strained Si

et al. 2008

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“…This interpretation is supported, although somewhat indirectly, by reports of enhanced activation of B in Si driven by compressive strain. 16,17 In this case, where the lattice strain field is compressive and the local strain field around the relatively small substitutional B atom is tensile, B activation is seen to be increased. This increase is attributed to a compensation effect between the two strain fields, favoring substitutional incorporation of B.…”

Section: Fig 3 Sims and Differentialmentioning

confidence: 99%

Highly conductive Sb-doped layers in strained Si

Bennett

Cowern

Smith

et al. 2006

Applied Physics Letters

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The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, ϳ10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor devices.

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“…Strained Si epitaxially grown on relaxed SiGe provides enhanced electron and hole mobilities compared to bulk Si because of the modification of the band structure by in-plane tensile strain [1,2]. It has been shown that the performance of 40 nm gate length MOSFETs was significantly improved using strained Si [3].…”

Section: Introductionmentioning

confidence: 98%