Scalable Multitasking Dynamic Pulse Based Reliability Stress Test for High Voltage Discrete Semiconductors

Patmanidis, Konstantinos; Glavanovics, Michael; Muetze, Annette

doi:10.23919/epe21ecceeurope50061.2021.9570461

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2023

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“…The herein presented work utilizes the system presented in [8] and depicted in Fig. 1 to apply a large number of single high current pulses to discrete 1200 V SiC MOSFETs in a discrete TO247 package.…”

Section: Methodsmentioning

confidence: 99%

Robustness of SiC MOSFETs under Repetitive High Current Pulses

Findenig¹,

Sievers²,

Voß

et al. 2023

MSF

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In this paper the robustness of state of the art SiC MOSFETs is analyzed under repetitivehigh current pulses far beyond the nominal values specified in their data sheets. SiC MOSFETs aremore and more used in many power electronics-based applications, such as industrial motor controlunits. During start-up events or load changes of such motors sudden high current pulses may occur.This imposed stress might trigger the drift of electrical parameters that can limit the operating rangeand lifetime of commercially available SiC MOSFETs. Nevertheless, the tested devices withstoodmillions of repetitive high current pulses several times higher than the rated nominal current withoutany signs of degradation.

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Section: Methodsmentioning

confidence: 99%