2019
DOI: 10.1021/acsanm.8b02126
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Scalable Production of Graphene Oxide Using a 3D-Printed Packed-Bed Electrochemical Reactor with a Boron-Doped Diamond Electrode

Abstract: Although graphene oxide (GO) has shown enduring popularity in the research community, its synthesis remains cost prohibitive for many of its demonstrated applications. While significant progress has been made on developing an electrochemical route to GO, existing methods have key limitations regarding their cost and scalability. To overcome these challenges, we employ a combination of commercially available fused-deposition-modeling-based 3D printing and highly robust boron-doped diamond with a wide electroche… Show more

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Cited by 47 publications
(32 citation statements)
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“…In addition, GO samples showed a weak broad peak centered at around 22°( see Fig. S1), and it is attributed to the less oxidized parts in GO [35][36][37]. For the GO oxidized at 25°C, the intensity of this broad peak is highest in GO-25C3h and decreases to the same level in both GO-25C5h and GO-25C9h.…”
Section: Chemical Properties Of As-prepared Rt-go and Low T-gomentioning
confidence: 96%
“…In addition, GO samples showed a weak broad peak centered at around 22°( see Fig. S1), and it is attributed to the less oxidized parts in GO [35][36][37]. For the GO oxidized at 25°C, the intensity of this broad peak is highest in GO-25C3h and decreases to the same level in both GO-25C5h and GO-25C9h.…”
Section: Chemical Properties Of As-prepared Rt-go and Low T-gomentioning
confidence: 96%
“…31 Mild thermal annealing in ambient air is a simple and effective route to deoxygenate GO. 52 By comparing the weight changes for GOGIC annealed at different constant temperatures (Figure 4d-f), GOGIC-25-8h saw the most weight loss at 150 °C, relative to other conditions, while GOGIC-45-4h lost more weight at 175 and 200 °C, implying deoxygenation of GOGIC-25-8h occurred more readily at lower temperature than GOGIC-45-4h. As shown in Table S1, the percentage of residual mass changed from 69% to 65% in GOGIC-25-8h as raising the annealing temperature from 150 to 200 °C.…”
Section: Chemical Characterizations Of Fully Oxidized Gogic Before Anmentioning
confidence: 97%
“…4d reveal that rEGO and B-rEGO have very high C/O ratios of 42.88 and 54.08, and a weak B1s peak at 192.2 eV in the B-rEGO sample indicates a tiny amount of boron (0.21 at.%), which has been doped in the final products. Compared with chemically made GO, electrochemically made GO shows higher thermal lability of oxygen groups, 8,62,63 which accounts for the high C/O ratio in the rEGO and B-rEGO. The elemental proportions in Table SIII and the deconvolution of XPS C1s spectra in Figure S4 revealed in detail the proportion of oxygen groups in EGO, and H 3 BO 3 -EGO was hugely reduced.…”
Section: Fabrication Of Highly Reduced Gomentioning
confidence: 99%
“…The B-rEGO contains even fewer oxygen functional groups than rEGO, because during annealing the intercalated tetraborate anion attached to C-O-C in H 3 BO 3 -EGO can assist in creating functional group-free vacancy sites instead of formation of C=O group at the vacancy site, which can facilitate the fast ion transport in electrode material. 8,31,62,63 TEM and selected area electron diffraction (SAED) were used to uncover the lattice structure of rGO. During the thermal reduction process, the layered structure of GO would be distorted and reorganized.…”
Section: Fabrication Of Highly Reduced Gomentioning
confidence: 99%
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