Scalable production of solid-immersion lenses for quantum emitters in silicon carbide

Sardi, Fiammetta; Kornher, Thomas; Widmann, Matthias; Kolesov, Roman; Schiller, Ferdinand; Reindl, Thomas; Hagel, Marion; Wrachtrup, Joerg

doi:10.1063/5.0011366

Cited by 19 publications

(20 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…217 Solid immersion lenses are typically a good choice to limit the impact of total internal reflection. Solid immersion lenses have also used to enhance optical collection from V Si (−) and a scalable method to fabricate them, based on resist reflow and etching, has been demonstrated, 22,45 while with a lower fluorescence enhancement compared to nanopillars. 21 Integration in Electronic Devices: Charge-State Control and Spectral Stability.…”

Section: ■ Materials Optical Propertiesmentioning

confidence: 99%

Silicon Carbide Photonics Bridging Quantum Technology

et al. 2022

View full text Add to dashboard Cite

In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) has witnessed many advances, giving rise to electronic devices widely used in highpower and high-frequency applications. Recent research has revealed that SiC also exhibits unique optical properties that can be utilized for novel photonic devices. SiC is a transparent material from the UV to the infrared, possess nonlinear optical properties from the visible to the mid-infrared and it is a meta-material in the mid-infrared range. SiC fluorescence due to color centers can be associated with single photon emitters and can be used as spin qubits for quantum computation and communication networks and quantum sensing. This unique combination of excellent electronic, photonic and spintronic properties has prompted research to develop novel devices and sensors in the quantum technology domain. In this perspective, we highlight progress, current trends and prospects of SiC science and technology underpinning the development of classical and quantum photonic devices. Specifically, we lay out the main steps recently undertaken to achieve high quality photonic components, and outline some of the current challenges SiC faces to establish its relevance as a viable photonic technology. We will also focus on its unique potential to bridge the gap between classical and quantum photonics, and to technologically advance quantum sensing applications. We will finally provide an outlook on possible alternative applications where photonics, electronics, and spintronics could merge.

show abstract

Section: ■ Materials Optical Propertiesmentioning

confidence: 99%

Silicon Carbide Photonics Bridging Quantum Technology

et al. 2022

View full text Add to dashboard Cite

show abstract

“…In SiC, solid immersion lenses (SILs) that are milled into the substrate and contain one or more quantum emitters have become popular, [ 52 ] and strategies for large‐scale fabrication have been proposed. [ 217 ] Figure a illustrates a SIL milled into a 4H‐SiC wafer (top) and single

V_{Si}

defects embedded therein (bottom), demonstrating the potential of the SIL platform for detecting isolated emitters. Alternatively, suspended waveguides [ 218 ] or arrays of nanopillars containing single emission centers [ 219 ] provide similar capabilities but promise greater ease of fabrication, while ref.…”

Section: Coupling To Photonic Devicesmentioning

confidence: 99%

“…Passive photonic devices (e.g., solid immersion lenses and nanopillars) can be scalably manufactured and are capable of enhancing collection efficiencies in both diamond and SiC (see, e.g., refs. [217,219]). Fabrication of microresonators is available in both SiC and diamond with comparable quality, [232,237] while photonic crystal nanocavities can be created with larger variety and quality in SiC because of the more versatile thin-film platform.…”

Section: Coupling To Photonic Devicesmentioning

confidence: 99%

Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide

Bathen

Vines

2021

Adv Quantum Tech

View full text Add to dashboard Cite

Point defects in semiconductors are emerging as an important contender platform for quantum technology (QT) applications, showing potential for quantum computing, communication, and sensing. Indeed, point defects have been employed as nuclear spins for nanoscale sensing and memory in quantum registers, localized electron spins for quantum bits, and emitters of single photons in quantum communication and cryptography. However, to utilize point defects in semiconductors as single-photon sources for QT, control over the influence of the surrounding environment on the emission process must be first established. Recent works have revealed strong manipulation of emission energies and intensities via coupling of point defect wavefunctions to external factors such as electric fields, strain and photonic devices. This review presents the state-of-the-art on manipulation, tuning, and control of single-photon emission from point defects focusing on two leading semiconductor materials-diamond and silicon carbide.

show abstract

“…[ 61 ] In contrast to wet etching methods, dry etching makes use of ionized plasmas as the etchant and patterned resists can be used for the creation of nanostructures. [ 62,63 ]…”

Section: Sic Nanoparticlesmentioning

confidence: 99%

Fluorescent Silicon Carbide Nanoparticles

Vries

Sato

Ohshima

et al. 2021

Advanced Optical Materials

View full text Add to dashboard Cite

Silicon carbide (SiC) is an indirect wide band gap semiconductor that is utilized in many industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit a versatile surface chemistry, fluoresce from the ultraviolet to the near‐infrared spectral ranges, and their sizes can be tuned from one to hundreds of nanometers. Yet, fluorescent SiC NPs have received far less attention by the scientific community. This review summarizes the state‐of‐the‐art in fluorescent SiC NPs. Nanoparticle fabrication methods, characterization techniques, nanoparticle surface chemistry, and SiC NPs fluorescence properties are assessed in detail. Atomic defects and impurities in the SiC crystal lattice (so‐called color centers), surface‐induced fluorescence, quantum confinement, and band‐edge fluorescence are identified as the main sources of fluorescence in SiC NPs. While many color centers are reported in bulk SiC, only few are identified in SiC NPs and interface‐related defects remain poorly understood, creating enormous potential for scientific discovery. Finally, an overview of demonstrated and emerging potential applications of SiC NPs in the areas of bioimaging and quantum sensing is provided.

show abstract

Scalable production of solid-immersion lenses for quantum emitters in silicon carbide

Cited by 19 publications

References 27 publications

Silicon Carbide Photonics Bridging Quantum Technology

Silicon Carbide Photonics Bridging Quantum Technology

Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide

Fluorescent Silicon Carbide Nanoparticles

Contact Info

Product

Resources

About