Scaled GaAs MESFET's with gate length down to 100 nm

Jaeckel, H.; Gräf, Volker; Zeghbroeck, B.J. Van; Vettiger, P.; Wolf, Peter

doi:10.1109/edl.1986.26459

Cited by 16 publications

(2 citation statements)

References 7 publications

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“…We measured an increased transconductance for higher drain voltages reaching values as high as 1750 mS/ mm. We also noted that unlike other GaAs MESFET's, breakdown is not determined by gate-drain diode breakdown [l] or punchthrough [3] (for experimental results, see also [4] and [ 5 ] ) . Instead we show that breakdown is caused by a positive feedback mechanism between electron-hole pair generation at the drain end and a parasitic lateral bipolar transistor in parallel with the MESFET.…”

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confidence: 95%

Parasitic bipolar effects in submicrometer GaAs MESFET's

Zeghbroeck

Patrick

Meier

et al. 1987

IEEE Electron Device Lett.

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We report the observation for the first time of parasitic bipolar action in GaAs MESFET's. It manifests itself in the form of increased transconductance at higher drain voltage, abrupt change in output conductance (kink effect) around 4-V drain-source voltage, and a gate-voltage-dependent substrate current. These effects are explained by electron-hole pair generation in the high-field region at the drain. The holes generated are injected into the substrate where they form the base region of a parasitic lateral bipolar transistor. The effect also explains a new breakdown mechanism for short-channel enhancement-mode MES-FET's.

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confidence: 95%

Parasitic bipolar effects in submicrometer GaAs MESFET's

Zeghbroeck

Patrick

Meier

et al. 1987

IEEE Electron Device Lett.

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“…(3-c). By observing the magnitude of I g it is evident that the interfacial layer is of nominal thickness and the device depletion is predominantly controlled by the Schottky barrier gate [5,10]. Figure (4) represents characteristics of a device (A4-74-10) having the same fabrication parameters as that of the device of Fig.…”

Section: Ii-interfacial Layer Currentmentioning

confidence: 97%

Effects of interfacial layer on submicron GaAs MESFETs characteristics

Ahmed

Memon

Моиз

2013

2013 IEEE 9th International Conference on Emerging Technologies (ICET)

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In this paper, the effects of Schottky barrier interfacial layer on submicron GaAs MESFETs characteristics are discussed. The field dependent mobility, fi" x of carriers scattering from the channel into the Schottky barrier gate is evaluated. It is shown that ju" x increases significantly for devices that have relatively thicker interfacial layer. The effect of interfacial layer thickness on the device transconductance, output conductance and threshold voltage is evaluated. It is demonstrated that an interfacial layer thicker than 0.5 nm, causes adverse effects on the device output and transfer characteristics by lowering its Schottky barrier height. A plausible explanation for reduced barrier height is given. Based on the proposed explanation, the definition of threshold voltage is modified by incorporating a shift caused by the interfacial layer.

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