Scaled Micro-Relay Structure with Low Strain Gradient for Reduced Operating Voltage

Chen, I-Ru; Hutin, Louis; Park, Chanro; Lee, Rinus; Nathanael, Rhesa; Yaung, Jack; Jeon, Jong-June; Liu, Tsu‐Jae King

doi:10.1149/1.3700943

Cited by 9 publications

(5 citation statements)

References 2 publications

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“…Two variations of this insulated-body relay design, 4T and 6T, have been reported. The contacting electrode material initially was tungsten (W) and later changed to ruthenium (Ru) and other materials for improved Rc stability [47,48]. Although the in-plane dimensions of this relay are in the micrometer range, the as-fabricated contact gap thickness (gd) is in the nanoscale range [44].…”

Section: Other Relays Fabricated Using Cmos-compatible Processesmentioning

confidence: 99%

“…Although the in-plane dimensions of this relay are in the micrometer range, the as-fabricated contact gap thickness (gd) is in the nanoscale range [44]. Operating (gate voltage) lower than 1 V has been enabled by applying a body bias voltage [48] with a turn-on delay below 1 µs. Reliability studies have shown that Rc remains below 10 kΩ under hot switching conditions for more than 10 8 cycles [49].…”

Section: Other Relays Fabricated Using Cmos-compatible Processesmentioning

confidence: 99%

“…Hybrid CMOS/NEM technology can potentially achieve the advantages of high-speed CMOS operation together with low-power NEM relay operation [67]. For example, a hybrid NEMS/CMOS static random-access memory (SRAM) cell design for lower static power dissipation and improved cell stability is proposed in [48], and projected to provide a reduction in energy loss of 85%, improvement in write and read times by 60% and 10%, respectively, and an improved static noise margin. As another example, NEM relays can be monolithically integrated with CMOS devices to implement non-volatile SRAM and non-volatile content-addressable memory (CAM) for reduced power consumption [68].…”

Section: Relay-based Logic Circuit Designmentioning

confidence: 99%

“…The hysteresis voltage limits the degree to which the gate voltage swing can be reduced in this manner, however, pointing again to the need to minimize contact adhesive force. Several NEM relays have already demonstrated sub-1 V operating voltages using the body-biasing technique [22,48,54].…”

Section: Remaining Challenges and Pathways To Solutions For Nem Relaymentioning

confidence: 99%

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Nanoelectromechanical Switches for Low-Power Digital Computing

Peschot¹,

Qian²,

Liu³

2015

Micromachines

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Abstract:The need for more energy-efficient solid-state switches beyond complementary metal-oxide-semiconductor (CMOS) transistors has become a major concern as the power consumption of electronic integrated circuits (ICs) steadily increases with technology scaling. Nano-Electro-Mechanical (NEM) relays control current flow by nanometer-scale motion to make or break physical contact between electrodes, and offer advantages over transistors for low-power digital logic applications: virtually zero leakage current for negligible static power consumption; the ability to operate with very small voltage signals for low dynamic power consumption; and robustness against harsh environments such as extreme temperatures. Therefore, NEM logic switches (relays) have been investigated by several research groups during the past decade. Circuit simulations calibrated to experimental data indicate that scaled relay technology can overcome the energy-efficiency limit of CMOS technology. This paper reviews recent progress toward this goal, providing an overview of the different relay designs and experimental results achieved by various research groups, as well as of relay-based IC design principles. Remaining challenges for realizing the promise of nano-mechanical computing, and ongoing efforts to address these, are discussed.

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Section: Other Relays Fabricated Using Cmos-compatible Processesmentioning

confidence: 99%

Section: Other Relays Fabricated Using Cmos-compatible Processesmentioning

confidence: 99%

Section: Relay-based Logic Circuit Designmentioning

confidence: 99%

Section: Remaining Challenges and Pathways To Solutions For Nem Relaymentioning

confidence: 99%

See 2 more Smart Citations

Nanoelectromechanical Switches for Low-Power Digital Computing

Peschot¹,

Qian²,

Liu³

2015

Micromachines

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show abstract

“…Research efforts so far have been focused on lowering the operating voltages by either improving the device design or reducing the device size . A body bias method has also been introduced to reduce the gate voltage, but it fails to decrease the overall operating voltage because the body bias voltage is usually high (≈4–12 V) . Currently, sub 1 V switches without body bias are mostly based on nano‐electromechanical (NEM) technologies using ultrasmall air gaps or ultrathin piezoelectric layers .…”

mentioning

confidence: 99%

A 0.2 V Micro‐Electromechanical Switch Enabled by a Phase Transition

Dong

Choe

Wang

et al. 2018

Small

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Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳10 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications.

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NEMS Switch Technology

Hutin¹,

Liu²

2014

Emerging Nanoelectronic Devices

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Scaled Micro-Relay Structure with Low Strain Gradient for Reduced Operating Voltage

Cited by 9 publications

References 2 publications

Nanoelectromechanical Switches for Low-Power Digital Computing

Nanoelectromechanical Switches for Low-Power Digital Computing

A 0.2 V Micro‐Electromechanical Switch Enabled by a Phase Transition

NEMS Switch Technology

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